Abstract
A hybrid system comprising a semiconductor quantum dot in the proximity of a hetero interface of two materials is studied theoretically, and its optical response analyzed. We show that internal degrees of freedom of the system can manifest optical bistability and hysteresis as functions of the incident field intensity, which show up in various measurable characteristics. In particular, the Raylegh scattering or luminescence intensity of the system can be switched abruptly between its two stable states. On the other hand, if the refractive index of one of the materials forming the interface can be electrically modified, as it happens in the case of an indium-tin oxide/dielectric interface, the bistability and hysteresis can be controlled dynamically by changing the gate voltage. The latter opens new possibilities for applications in the field of optical and electro-optical switches, modulators or memory cells at nanoscale.
Keywords
- Electro-optical Switches
- Optical Bistability
- Incident Field Intensity
- Control Quantum Dots
- Incoming Plane Wave
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Munárriz Arrieta, J. (2014). Electro-Optical Hysteresis of Nanoscale Hybrid Systems. In: Modelling of Plasmonic and Graphene Nanodevices. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-07088-9_7
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DOI: https://doi.org/10.1007/978-3-319-07088-9_7
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