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Optical Properties of Quantum Wells and Superlattices

Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 197)

Abstract

In this chapter are reviewed the basic concepts required to compute the band structure of quantum wells. Then we discuss the variational treatments of the exciton binding energies. Quantitative applications are given in the case of GaN–AlGaN, GaInN–GaN and ZnO–ZnMgO quantum wells grown along arbitrary orientations so that Quantum Confined Stark Effect exists or not. Finally we discuss the properties of quantum dots.

Keywords

Polar Quantum Wells Quantum Confined Stark Effect Exciton Wide Well Photoreflectance (PR) 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    M. Leroux, N. Grandjean, M. Laügt, J. Massies, B. Gil, P. Lefebvre, P. Bigenwald, Quantum confined stark effect due to built-in internal polarization fields in (Al, Ga)N/GaN quantum wells. Phys. Rev. B 58, R13371 (1998)ADSCrossRefGoogle Scholar
  2. 2.
    M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, P. Bigenwald, Barrier-width dependence of group-III nitrides quantum-well transition energies. Phys. Rev. B 60, 1496 (1999)ADSCrossRefGoogle Scholar
  3. 3.
    N. Grandjean, J. Massies, M. Leroux, Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field. Appl. Phys. Lett. 74, 2361 (1999)ADSCrossRefGoogle Scholar
  4. 4.
    M. Gallart, A. Morel, T. Taliercio, P. Lefebvre, B. Gil, J. Allegre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells. Phys. Stat. Sol. (b) 180, 127 (2000)ADSCrossRefGoogle Scholar
  5. 5.
    R. Butte, J.F. Carlin, E. Feltin, M. Gonschorek, S. Nicolay, G. Christmann, D. Simeonov, A. Castiglia, J. Dorsaz, H.J. Buehlmann, S. Christopoulos, G.B.H. von Hogersthal, A.J.D. Grundy, M. Mosca, C. Pinquier, M.A. Py, F. Demangeot, J. Frandon, P.G. Lagoudakis, J.J. Baumberg, N. Grandjean, Current status of AlInN layers lattice-matched to GaN for photonics and electronics. J. Phys. D—Appl. Phys. 40, 6328 (2007)ADSCrossRefGoogle Scholar
  6. 6.
    B. Damilano, N. Grandjean, S. Vzian, J. Massies, J. Cryst. Growth 227–228, 466 (2001)CrossRefGoogle Scholar
  7. 7.
    T.J. Ochalski, B. Gil, P. Bigenwald, M. Bugajski, A. Wojcik, P. Lefebvre, T. Taliercio, N. Grandjean, J. Massies, Dual contribution to the stokes shift in InGaN-GaN quantum wells. Phys. Stat. Sol. (b) 228, 111 (2001)ADSCrossRefGoogle Scholar
  8. 8.
    A. Hangleiter, J.S. Im, J. Off, F. Scholz, Optical properties of nitride quantum wells: how to separate fluctuations and polarization field effects. Phys. Stat. Sol. (b) 216, 427 (1999)ADSCrossRefGoogle Scholar
  9. 9.
    J. Danhof, U.T. Schwarz, A. Kaneta, Y. Kawakami, Time-of-flight measurements of charge carrier diffusion in \({\text{ In }}_{\text{ x }}{\text{ Ga }}_{1-{\text{ x }}}\)N-GaN quantum wells. Phys. Rev. B 84, 035324 (2011)ADSCrossRefGoogle Scholar
  10. 10.
    B. Maleyre, S. Ruffenach, O. Briot, B. Gil, Growth of InN quantum dots by MOVPEby. Phys. Stat. Sol. (c) 2, 826 (2005)CrossRefGoogle Scholar
  11. 11.
    S. Ruffenach, O. Briot, M. Moret, B. Gil, Control of InN quantum dot density using rare gases in metal organic vapor phase epitaxy. Appl. Phys. Lett. 90, 153102 (2007)ADSCrossRefGoogle Scholar
  12. 12.
    D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M.V. Durnev, A.V. Kavokin, Excitons in nitride heterostructures: from zero- to one-dimensional behavior. Phys. Rev. B 88, 125437 (2013)ADSCrossRefGoogle Scholar
  13. 13.
    F.S. Cheregi, A. Vinattieri, E. Feltin, D. Simeonov, J.-F. Carlin, R. Butt, N. Grandjean, M. Gurioli, Biexciton kinetics in GaN quantum wells: time-resolved and time-integrated photoluminescence measurements. Phys. Rev. B 77, 125342 (2008)ADSCrossRefGoogle Scholar
  14. 14.
    D. Simeonov, A. Dussaigne, R. Butt, N. Grandjean, Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field. Phys. Rev. B 77, 075306 (2008)ADSCrossRefGoogle Scholar
  15. 15.
    S. Kako, K. Hoshino, S. Iwamoto, S. Ishida, Y. Arakawa, Exciton and biexciton luminescence from single hexagonal GaN/AlN self-assembled quantum dots. Appl. Phys. Lett. 85, 64 (2004)Google Scholar
  16. 16.
    C. Santori, S. Gotzinger, Y. Yamamoto, S. Kako, K. Hoshino, Y. Arakawa, Photon correlation studies of single GaN quantum dots. Appl. Phys. Lett. 87, 051916 (2005)ADSCrossRefGoogle Scholar
  17. 17.
    S. Kako, C. Santori, K. Hoshino, S. Gotzinger, Y. Yamamoto, Y. Arakawa, A gallium-nitride single-photon source operating at 200K. Nat. Mater. 5, 887 (2006)ADSCrossRefGoogle Scholar
  18. 18.
    F. Rol, S. Founta, H. Mariette, B. Daudi, Le Si Dang, J. Bleuse, D. Peyrade, J.-M. Grard, and B. Gayral, Probing exciton localization in nonpolar GaN/AlN quantum dots by single-dot optical spectroscopy. Phys. Rev. B 75, 125306 (2007)Google Scholar
  19. 19.
    J. Renard, R. Songmuang, G. Tourbot, C. Bougerol, B. Daudin, B. Gayral, Evidence for quantum-confined stark effect in GaN/AlN quantum dots in nano wires. Phys. Rev. B 80, 121305(R) (2009)ADSCrossRefGoogle Scholar
  20. 20.
    C. Kindel, S. Kako, T. Kawano, H. Oishi, Y. Arakawa, G. Honig, M. Winkelnkemper, A. Schliwa, A. Hoffmann, D. Bimberg, Exciton fine-structure splitting in GaN/AlN quantum dots. Phys. Rev. B 81, 241309 (2010)ADSCrossRefGoogle Scholar
  21. 21.
    S. Sergent, S. Kako, M. Burger, D. As, Y. Arakawa, Narrow spectral linewidth of single zinc-blende GaN/AlN self-assembled quantum dots. Appl. Phys. Lett. 103, 151109 (2013)ADSCrossRefGoogle Scholar
  22. 22.
    M.J. Holmes, K. Choi, S. Kako, M. Arita, Y. Arakawa Room-temperature triggered single photon emission from a IIINitride site-controlled nanowire quantum dot. Nano Lett. (2014)Google Scholar

Further Reading

  1. 23.
    Wave mechanics applied to semiconductor heterostructures by G. Bastard (Les Editions de Physique, Paris, 1990).Google Scholar
  2. 24.
    Nitride Semiconductor Devices “Principle and simulation” edited by J. Piprek (Wiley VCH, 2007).Google Scholar
  3. 25.
    Introduction to nitride semiconductor blue lasers and light-emitting diodes, edited by S. Nakamura, S. F.Chichibu (CRC Press, London, 2000).Google Scholar
  4. 26.
    Nitride phosphors and Solid State lighting edited by R.-J. Xie, Y. Q. Li, N. Hirosaki, H. Yamamoto, (CRC Press, Taylor and Francis, London, 2011).Google Scholar
  5. 27.
    Self-assembled quantum dots, edited by Z. M. Wang (Springer, 2008).Google Scholar
  6. 28.
    Rare Earth-doped III-Nitrides for Optoelectronic and Spintronic applications, edited by K. O’Donnell, V. Dierof, (Springer, 2010).Google Scholar
  7. 29.
    Light-emitting diodes, by E. F. Schubert (Cambridge University Press, 2006).Google Scholar
  8. 30.
    GaN-based materials and Devices edited by M. S. Shur, R. F. Davis (World Scientific, 2004).Google Scholar
  9. 31.
    Wide energy band gap electronic Devices, edited by F. Ren, J. C. Zolper (World Scientific, 2003).Google Scholar
  10. 32.
    Variational treatment of the exciton binding energy problem in low dimensional systems with one marginal potential, B. Gil, and P. Bigenwald, Solid State Communications, 94, 883 (1995).Google Scholar
  11. 33.
    Excitonic properties and resonance widths in biased, (Ga, In)As-GaAs double quantum wells, P. Bigenwald, and B. Gil, Phys. Rev. B 51, 9780 (1995).Google Scholar
  12. 34.
    Optical Spectroscopy in ZnCdSe-ZnSe Graded Index Separate Confinement, Heterostructures, L. Aigouy, V. Mathet, F. Liaci, B. Gil, N. Briot, T. Cloitre, O. Briot, M. Averous, and R. L. Aulombard, Phys. Rev. B 53, 4708 (1996).Google Scholar
  13. 35.
    Recombination dynamics of free and localized excitons in GaN-AlGaN quantum wells, P. Lefebvre, J. Allegre, B. Gil, A. Kavokine, H. Mathieu, H. Morkoc, W. Kim, A. Salvador, A. Botchkarev, Phys. Rev. B 57, 9447 (R) (1998).Google Scholar
  14. 36.
    Effect due to built-in internal polarization fields in, AlGaN/GaN quantum wells, M. Leroux, N. Grandjean, M. Laügt, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, Phys. Rev. B 58, 13371(R) (1999).Google Scholar
  15. 37.
    Observation of long-lived oblique excitons in GaN/AlGaN multiple quantum wells, B. Gil, P. Lefebvre, J. Allegre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, P. Bigenwald, and P. Christol, Phys. Rev. B 59, 10246 (1999).Google Scholar
  16. 38.
    Time resolved photoluminescence as a probe of internal electric fields in GaN/AlGaN quantum wells, P. Lefebvre, J. Allegre, B. Gil, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, and P. Bigenwald, Phys. Rev. B 59, 15563 (1999).Google Scholar
  17. 39.
    Photoreflectance Investigation of the bowing parameter in AlGaN alloys lattice-matched to GaN, T. Ochalski, B. Gil, P. Lefebvre, N. Grandjean, M. Leroux, J. Massies, S. Nakamura, and H. Morko, Appl. Phys. Lett. 74, 3353 (1999).Google Scholar
  18. 40.
    Slow spin relaxation observed in InGaN/GaN multiquantum wells, M. Julier, A. Vinatierri, M. Colocci, P. Lefebvre, B. Gil, D. Scalbert, C. A. Tran, R. F. Karlicek Jr., and J. P. Lascaray, Physica Status Solidi 216, 341 (1999).Google Scholar
  19. 41.
    Confined Excitons in GaN-AlGaN Quantum Wells, P. Bigenwald, P. Lefebvre, T. Bretagnon and B. Gil, Physica Status Solidi 216, 37, (1999).Google Scholar
  20. 42.
    Reduction of oscillator strength due to piezoelectric fields in \(GaN-Al_{x}Ga_{1-x}N \) quantum wells by Jin Seo Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rev. B 57, R9435, (1998). Google Scholar
  21. 43.
    Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells, by T.Takeuchi, H. Amano, and I. Akasaki, Japanese Journal of Applied Physics 39 413, (2000).Google Scholar
  22. 44.
    Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells by T. Takeuchi, S.Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, in Japanese Journal of Applied Physics, 36, L382, (1997).Google Scholar
  23. 45.
    Photoreflectance spectroscopy as a powerful tool for the investigation of GaN/AlGaN quantum well structures, T. Ochalski, B. Gil, P. Lefebvre, N. Grandjean, M. Leroux, J. Massies, Solid State Communications 109, 567, (1999).Google Scholar
  24. 46.
    Barrier width dependence of group III nitrides quantum well transition energies, M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, Phys. Rev. B 60, 1496, (1999).Google Scholar
  25. 47.
    Highly photo-excited nitride quantum wells: threshold for exciton bleaching, P. Bigenwald, A. Kavokin, B. Gil, and P. Lefebvre, Physica Status Solidi 216, 481, (1999).Google Scholar
  26. 48.
    Electron-hole plasma effect on excitons in GaN-GaAlN quantum wells, P. Bigenwald, A. Kavokin, B. Gil, and P. Lefebvre, Phys. Rev. B 61, 15621 (2000).Google Scholar
  27. 49.
    Exclusion principle and screening of excitons in, GaN/AlxGa1-xN quantum wells, P. Bigenwald, A. Kavokin, B. Gil, and P. Lefebvre. Phys. Rev. B 63, 035315 (2001)Google Scholar
  28. 50.
    Excitons and trions confined in quantum systems: from low to high injection regimes, P. Bigenwald, A. Kavokin and B. Gil, Physica Satus Solidi (a) 195, 587 (2003).Google Scholar
  29. 51.
    Observation and modeling of the time-dependent de-screening of internal electric field in a wurtzite GaN-Al \(_0.15\)Ga\(_0.85\) N quantum well after high photo-excitation, P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, and J. Massies, Phys. Rev. B 69, 035307 (2004). Google Scholar
  30. 52.
    Photoreflectance spectroscopy investigation of GaN-AlGaN quantum well structures, T. J. Ochalski, B. Gil, P. Lefebvre, N. Grandjean, J. Massies, and M. Leroux, Physica Status Solidi 216, 221, (1999).Google Scholar
  31. 53.
    Dynamics of excitons in GaN-AlGaN MQWs with varying depths, thicknesses and barrier layers, P. Lefebvre, M. Gallart, T. Taliercio, B. Gil, J. Allegre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, and P. Bigenwald, Physica Status Solidi 216, 261 (1999).Google Scholar
  32. 54.
    High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy, P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. Allegre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, and J. Massies, Appl. Phys. Lett. 78, 1252 (2001).Google Scholar
  33. 55.
    Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes, P. Lefebvre, T. Taliercio, A. Morel, J. Allgre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, and J. Massies, Appl. Phys. Lett. 78, 1538 (2001).Google Scholar
  34. 56.
    Extremely sharp dependence of the exciton oscillator strength on quantum well width in GaN-AlGaN system: the polarization effect, M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, and J. Massies, Phys. Rev. B 64 (R), 121304 (2001).Google Scholar
  35. 57.
    Large size dependence of exciton longitudinal phonon coupling in nitride-based quantum wells and quantum boxes, S. Kalliakos, X. B. Zhang, T. Taliercio, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, and J. Massies, Appl. Phys. Lett. 80, 428, (2002).Google Scholar
  36. 58.
    Donor Acceptor-like behavior of Electron-hole recombinations in In, GaN-GaN low dimensional systems, A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil. Phys. Rev. B 68, 045331 (2003).Google Scholar
  37. 59.
    Donor binding energies in group-III-nitride-based quantum wells, Influence of internal electric fields, A. Morel, P. Lefebvre, T. Taliercio, M. Gallart, B. Gil, and H. Mathieu. Materials Science and Engineering B 82, 221 (2001).Google Scholar
  38. 60.
    Effects of the optical pumping intensity and temperature on excitons in GaN-based quantum wells, P. Bigenwald, A. Kavokin, P. Christol, P. Lefebvre, and B. Gil, Materials Science and Engineering B 82, 185 (2001).Google Scholar
  39. 61.
    Temperature enhancement of the exciton binding energy in nitride quantum structures, P. Bigenwald, B. Gil, A. Kavokin, and P. Christol, Physica Status Solidi (a) 183, 125 (2001).Google Scholar
  40. 62.
    Blue-light emission from \(GaN-Al_{0.5}Ga_{0.5}N\) quantum dots by T. Huault, J. Brault, F.Natali, B.Damilano, D. Lefebvre, L.Nguyen, M.Leroux, J Massies, in applied Physics letters, 92, 051911 (2008). Google Scholar
  41. 63.
    The dual contribution to the stokes-shift in InGaN-GaN quantum wells, T. J. Ochalski, B. Gil, P. Bigenwald, M. Bugajski, A. Wojcik, P. Lefebvre, T.Taliercio, N. Grandjean, and J. Massies, Physica Status Solidi (b) 228, 111 (2001).Google Scholar
  42. 64.
    Carrier dynamics in group III nitride low dimensional systems : localization versus quantum confined Stark effect, P. Lefebvre, T. Taliercio, S. Kalliakos, A. Morel, X. B. Zhang, M. Gallart, T. Bretagnon, and B. Gil, Physica Status Solidi (b) 228, 65 (2001).Google Scholar
  43. 65.
    Experimental and theoretical tools for the study of exciton properties versus disorder in nitride-based heterostructures, B. Gil, M. Zamfirecu, P. Bigenwald, G. Malpuech, and A. Kavokin, Physica Status Solidi (b) 228, 471 (2001).Google Scholar
  44. 66.
    The effect of localization and of electric fields on LO-phonon-exciton coupling in InGaN-GaN quantum wells and quantum boxes, S. Kalliakos, P. Lefebvre, X. B. Zhang, T. Taliercio, B. Gil, N. Grandjean, B. Damilano, and J. Massies, Physica Status Solidi (b) 190, 149 (2002).Google Scholar
  45. 67.
    Barrier Composition Dependence of the Internal Electric Field in ZnO/Zn1-xMgxO Quantum Wells, T. Bretagnon, P. Lefebvre, T. Guillet, T. Taliercio, B. Gil, and C. Morhain, Appl. Phys. Lett. 90, 201912 (2007).Google Scholar
  46. 68.
    Polarized emission from GaN-AlN quantum dots: single dot spectroscopy and symmetry-based theory, R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, Phys. Rev. B 77, 235315 (2008).Google Scholar
  47. 69.
    Visualization of the Local Carrier Dynamics in an, InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy, A. Kaneta, T. Hashimoto, K. Nishimura, M. Funato, and Y. Kawakami, Applied Physics Express 3, 102102 (2010).Google Scholar
  48. 70.
    Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells., C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Teisseire-Doninelli, B. Vinter, and C. Deparis, Phys. Rev. B 72, 241305 (R) (2005).Google Scholar
  49. 71.
    Short-range spin exchange interaction in ZnO-ZnMgO quantum wells, B. Gil, P. Lefebvre, T. Bretagnon, T. Guillet, J. A. Sants, T. Taliercio, and C. Morhain. Phys. Rev. B 74, 153302 (2006).Google Scholar
  50. 72.
    Low temperature reflectivity study of nonpolar, ZnO/(Zn, Mg)O quantum wells grown on M-plane ZnO substrates, L. Baur, T. Bretagnon, C. Brimont, T. Guillet, B. Gil, D. Tainoff, M. Teisseire, J. M. Chauveau, Appl. Phys. Lett. 98, 101913 (2011).Google Scholar
  51. 73.
    Exciton radiative properties in nonpolar homoepitaxial, ZnO/(Zn, Mg)O quantum wells, L. Baur, T. Bretagnon, B. Gil, A. Kavokin, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire, and J.-M. Chauveau, Phys. Rev. B 84, 165312 (2011).Google Scholar
  52. 74.
    Phonon-assisted exciton formation in, ZnO/(Zn, Mg)O single quantum wells grown on C-plane oriented substrates, T. Bretagnon, L. Baur, T. Guillet, C. Brimont, M. Gallart, B. Gil, P. Gilliot, and C. Morhain, Journal of Luminescence. 136, 355 (2013).Google Scholar
  53. 75.
    Photoluminescence energy and linewidth for stackings of GaN-AlN quantum dot planes, S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Taliercio, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies, J. Appl. Phys. 96, 180 (2004).Google Scholar
  54. 76.
    Time dependence of the photoluminescence of GaN/AlN quantum dots under high photo-excitation, T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies, Phys. Rev. B 68, 205301 (2003).Google Scholar
  55. 77.
    Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots, S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Taliercio, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A.Dussaigne, and J. Massies. 5th International Symposium on Blue Lasers and Light-Emitting Diodes, Physica Status Solidi (b) 241, 2779 (2004).Google Scholar
  56. 78.
    Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots, T. Bretagnon, P. Valvin, R. Bardoux, P. Lefebvre, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano A. Dussaigne, and J. Massies, Phys. Rev. B 73, 113304 (2006).Google Scholar
  57. 79.
    Photoluminescence of single GaN/AlN hexagonal quantum dots on, Si(111): Spectral diffusion effects, R. Bardoux, T. Guillet, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, B. Gil, and F. Semond, Phys. Rev. B 74, 195319 (2006).Google Scholar
  58. 80.
    Time resolved photoluminescence study of ZnO-ZnMgO quantum wells, T. Bretagnon, P. Lefebvre, P. Valvin, B. Gil, C. Morhain, and X. D. Tang, Journal of Crystal growth 287, 12 (2006).Google Scholar
  59. 81.
    Excitonic Molecule Bound to the Isoelectronic Nitrogen Trap in GaP, by J. L. Merz, R. A. Faulkner, and P. J. Dean, Phys. Rev. 188, 1228 (1969).Google Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Institut de Physique de MontpellierUniversity of Montpellier 2Montpellier Cedex 05France

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