Skip to main content
SpringerLink
Log in

Optical Properties of Wurtzitic Semiconductors and Epilayers

  • Chapter
  • First Online:
Physics of Wurtzite Nitrides and Oxides

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 197))

  • 1180 Accesses

Abstract

We review the optical properties of bulk wurtzitic semiconductors. Reflectance and photoluminescence features are related to the crystal symmetry; selection rules for the optical process are introduced as well as the concepts of fee excitons and exciton-polaritons. The problem of the long-range Coulomb interaction in anisotropic uniaxial crystals is treated. Finally we discuss photoluminescence as an efficient tool for diagnosing doping in bulk semiconductors.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Hardcover Book
USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. A.J. Fischer, W. Shan, G.H. Park, J.J. Song, D.S. Kim, D.S. Yee, R. Horning, B. Goldenberg, Phys. Rev. B 56, 1077 (1997)

    Article  ADS  Google Scholar 

  2. Exciton Spectrum of Cadmium Sulfide, David G. Thomas and John J. Hopfield, Physical. Review 116, 573 (1959)

    Google Scholar 

  3. Aspects of polaritons, John J. Hopfield Proc. Int. Conf. Physics of semiconductors, Kyoto, 1966, J. Phys. Soc. Japan, 21, suppl.77-88, (1966), Theory of the Contribution of Excitons to the Complex Dielectric Constant of Crystals, J.J.Hopfield, Physical. Review 112, 1555 (1958)

    Google Scholar 

  4. Fano-Hopfield model and photonic band gaps for an arbitrary atomic lattice, Mauro Antezza, Yvan Castin. Phys. Rev. A 80, 013816, (2009)

    Google Scholar 

  5. Spatial dispersion effects in a mixed mode of exciton polariton in CdS, M.V.Lebedev, V.G.Lysenko and V.B. Timofeev, Sov. Phys. JETP 59, 1277, (1984)

    Google Scholar 

  6. Absorption, reflectance, and luminescence of GaN epitaxial layers, R.Dingle, D.D.Sell, S.E.Stokowski and M. Ilegems (Physical Review B 4, 1211, (1971)

    Google Scholar 

  7. Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers, S. Chichibu, A. Shikanai, T. Azuhata, and T. Sota, A. Kuramata and K. Horino, S. Nakamura, 3766 Appl. Phys. Lett. 68 (26), 3766, (1996)

    Google Scholar 

  8. Reflectance and emission spectra of excitonic polaritons in, GaN, K. Torii, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, and S. Nakamura. Phys. Rev. B 60, 4723 (1999)

    Google Scholar 

  9. Determination of the spin-exchange interaction constant in wurtzite GaN, M.Julier, J. Campo, B. Gil, J.P.Lascaray, and S. Nakamura, Physical Review B 57, R6791, (1998)

    Google Scholar 

  10. Negative spin-exchange splitting in the exciton fine structure of AlN, Martin Feneberg, Maria Fatima Romero, Benjamin Neuschl, Klaus Thonke, Marcus Röppischer, Christoph Cobet, Norbert Esser, Matthias Bickermann, and Rüdiger Goldhahn, Appl. Phys. Lett. 102, 052112 (2013)

    Google Scholar 

  11. Huge electron-hole exchange interaction in aluminum nitride, Ryota Ishii, Mitsuru Funato, and Yoichi Kawakami, Phys. Rev. B 87, 161204 (2013)—Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements, E. Silveira, J. A. Freitas, Jr., O. J. Glembocki, G. A. Slack, and L. J. Schowalter Phys. Rev. B 71, 041201 (2005)

    Google Scholar 

  12. Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge, Georg Rossbach, Martin Feneberg, Marcus Roppischer, Christoph Werner, Norbert Esser, Christoph Cobet, Tobias Meisch, Klaus Thonke, Armin Dadgar, Jrgen Blasing, Alois Krost, and Rudiger Goldhahn, Phys. Rev. B 83, 195202 (2011)

    Google Scholar 

  13. Transmission spectra of ZnO single crystals, WY. Liang and AD. Yoffe. Physical Review Letters 20, 59 (1968)

    Google Scholar 

  14. Valence-band ordering in ZnO, D. C. Reynolds, D. C. Look, and B. Jogai, C.W. Litton, G. Cantwell, W. C. Harsch. Phys. Rev. B 60, 2340 (1999)

    Google Scholar 

  15. Strain-fields effects and reversal of the nature of the fundamental valence band of ZnO epilayers, Bernard Gil, Alain Lusson, Vincent Sallet, Said-Assoumani Said-Hassani, Robert Triboulet, and Pierre Bigenwald Japanese Journal of Applied Physics Letters, 40, L1089, (2001)

    Google Scholar 

  16. The oscillator strengths of, A, B, and C excitons in ZnO films, Bernard Gil, Physical Review B Rapid, Communications 64, 201 310 (2001)

    Google Scholar 

  17. ZnO as a material mostly adapted for the realization of room-temperature polariton lasers, M.Zamfirescu, A.Kavokin, B.Gil, G.Malpuech, M.Kaliteevski, Physical Review B 65, 161 205–1 (2002)

    Google Scholar 

  18. Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal, S. F. Chichibu, T. Sota, G. Cantwell, D. B. Eason, and C. W. Litton, J. Appl. Phys. 93, 756, (2003)

    Google Scholar 

  19. Accurate determination of homogeneous and inhomogeneous excitonic broadening in ZnO by linear and nonlinear spectroscopies, E. Mallet, P. Disseix, D. Lagarde, M. Mihailovic, F. Reveret, T. V. Shubina, and J. Leymarie, Phys. Rev. B 87, 161202(R) (2013)

    Google Scholar 

  20. Optical anisotropy of A- and M-plane InN grown on free-standing GaN substrates, P. Schley, J. Rathel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Blasing, A. Krost, G. Koblmuller, J. S. Speck, and R. Goldhahn, Phys. Status Solidi A 207, 1062 (2010)

    Google Scholar 

  21. Temperature dependent band gap and homogeneous line broadening of the exciton emission in ZnO, R. Hauschild, H. Priller, M. Decker, J. Bruckner, H. Kalt, C. Klingshirn, phys. stat. sol. (c) 3, 976–979 (2006)

    Google Scholar 

  22. Temperature dependence of the energy gap in semiconductors, Y. Varshni. Physica 34, 149 (1967)

    Google Scholar 

  23. Pässler modeling [Parameter Sets Due to Fittings of the Temperature Dependencies of Fundamental Bandgaps in Semiconductors, R. Paessler, Physica Status Solidi (b) 216, 975 (1999)

    Google Scholar 

  24. Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer, H. Teisseyre, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Jun, A. Pietraszko, and T. D. Moustakas, J. Appl. Phys. 76, 2429 (1994)

    Google Scholar 

  25. Excitons in Degenerate Semiconductors, G. D. Mahan. Phys. Rev. 153, 882 (1967)

    Google Scholar 

  26. The determination of the bulk residual doping in indium nitride films using photoluminescence, M.Moret, S. Ruffenach, O Briot, and B Gil, Applied Physics Letters, 95, 031910, (2009)

    Google Scholar 

  27. Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN, B. Arnaudov, T. Paskova, E. M. Goldys, S. Evtimova, and B. Monemar, Phys. Rev. B 64, 045213, (2001)

    Google Scholar 

  28. Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels, B. Arnaudov, T. Paskova, P. P. Paskov, B. Magnusson, E. Valcheva, B. Monemar, H. Lu, W. J. Schaff, H. Amano, and I. Akasaki, Phys. Rev. B 69, 115216, (2004)

    Google Scholar 

  29. Effect of silicon and oxygen doping on donor bound excitons in bulk GaN, G. Pozina, S. Khromov, C. Hemmingsson, L. Hultman, and B. Monemar, Physical Review B 84, 165213 (2011)

    Google Scholar 

  30. Sharp bound and free exciton lines from homoepitaxial, AlN, Martin Feneberg, Benjamin Neuschl, Klaus Thonke, Ramon Collazo, Anthony Rice, Zlatko Sitar, Rafael Dalmau, Jinqiao Xie, Seiji Mita, and Rudiger Goldhahn. Phys. Status Solidi A 208, 1520 (2011)

    Google Scholar 

  31. Bound exciton and donoracceptor pair recombinations in ZnO, B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straburg, M. Dworzak, U. Haboeck, and A. V. Rodina, phys. stat. sol. (b) 241, 231 (2004)

    Google Scholar 

  32. Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films, K. Kornitzer, T. Ebner, K. Thonke, and R. Sauer, C. Kirchner, V. Schwegler, and M. Kamp, M. Leszczynski, I. Grzegory, and S. Porowski, Phys. Rev. B 60, 1471, (1999)

    Google Scholar 

  33. Internal structure of the neutral donor bound exciton complex in cubic zinc blende and wurtzite semiconductors, B.Gil, P.Bigenwald, M.Leroux, P.Paskov and B.Monemar, Physical Review B 75, 085204, (2007)

    Google Scholar 

  34. Recombination of free and bound excitons in GaN, B. Monemar, P. P. Paskov, J. P. Bergman, A. A. Toropov, T. V. Shubina, T. Malinauskas, and A. Usui, Physica Status Solidi (b) 245, 1723, (2008)

    Google Scholar 

  35. Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors, B.Gil, P.Bigenwald, P.Paskov and Bo Monemar, Physical Review B 84, 085211, (2010)

    Google Scholar 

  36. Band edge smearing in solid solutions, S.D Baranowski and A.L.Efros, Soviet Physics. Semiconductors 12, 1328 (1978)

    Google Scholar 

  37. Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy, Aurelien Morel, Thierry Taliercio, Pierre Lefebvre, Mathieu Gallart, Bernard Gil, Nicolas Grandjean, Jean Massies, Izabella Grzegory, and Sylvester Porowski, Materials Science and Engineering: B Volume 82, 173, (2001)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institut de Physique de Montpellier, University of Montpellier 2, Montpellier Cedex 05, France

    Bernard Gil

Authors
  1. Bernard Gil
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Bernard Gil .

Rights and permissions

Reprints and permissions

Copyright information

© 2014 Springer International Publishing Switzerland

About this chapter

Cite this chapter

Gil, B. (2014). Optical Properties of Wurtzitic Semiconductors and Epilayers. In: Physics of Wurtzite Nitrides and Oxides. Springer Series in Materials Science, vol 197. Springer, Cham. https://doi.org/10.1007/978-3-319-06805-3_4

Download citation

Publish with us

Policies and ethics

Search

Navigation