Abstract
In this chapter we review some growth methods like crystallization or epitaxy and give some elements relative to structural characterization methods.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Metalorganic vapor-phase epitaxial-growth of a high-quality GaN film using an Al buffer layer. Appl. Phys. Lett. 48, 383 (1986)
J.-M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux, B. Vinter, Built-in electric field in ZnO based semipolar quantum wells grown on (101–2) ZnO substrates. Appl. Phys. Lett. 103, 262104 (2013)
R. Doradzinski, R. Dwilinski, J. Garczynski, L.P. Sierzputowski, Y. Kanbara, Ammonothermal Growth of GaN Under Ammono-Basic Conditions (Springer, Berlin, 2010)
B. Gil, III-Nitride Semiconductors and their Modern Devices. (Oxford University Press, Oxford, 2013), pp. 121–146
T. Hashimoto, S. Nakamura, A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method (Springer, Berlin, 2010)
K. Hiramatsu, Epitaxial lateral overgrowth techniques used in group III nitride epitaxy Hiramatsu. J. Phys. Condens. Matter 13, 6962 (2001)
K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiraishi, K. Oki, Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE. J. Cryst. Growth 115, 628 (1991)
H. Morkoc, Comprehensive characterization of hydride VPE grown GaN layers and templates. Mater. Sci. Eng. R 33, 135 (2001)
S. Nakamura, GaN growth using GaN buffer layer. J. Appl. Phys. Part 2–Lett. 10A, L1705 (1991)
S. Yoshida, S. Misawa, S. Gonda, Improvements on the electrical and luminescent properties of reactive molecular-beam epitaxially grown GaN films by using AlN-coated sapphire substrates. Appl. Phys. Lett. 42, 427 (1983)
H. Morkoc, Nitride Semiconductors and Devices (Springer, Berlin, 1999)
D. Ehrentraut, E. Meissner, M. Bockowski, Technology of Gallium Nitride Crystal Growth (Springer, Berlin, 2010)
C.F. Klingshirn, B.K. Meyer, A. Waag, A. Hoffmann, J.M. Geurts, Zinc Oxide (Springer, Berlin, 2010)
I. Grzegory, High pressure growth of bulk GaN from solutions in gallium. J. Phys. Condens. Matter. 13, 6875 (2001)
B. Gil (ed.), III-Nitride Semiconductors and their Modern Devices (Oxford University Press, Oxford, 2013)
B. Gil (ed.), Low Dimensional Nitride Semiconductors (Oxford University Press, Oxford, 2002)
B. Gil (ed.), Group III-Nitride Semiconductor Compounds (Oxford University Press, Oxford, 1998)
H. Morkoç, Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices (Wiley, New York, 2009)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2014 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Gil, B. (2014). Basics of Growth and Structural Characterization. In: Physics of Wurtzite Nitrides and Oxides. Springer Series in Materials Science, vol 197. Springer, Cham. https://doi.org/10.1007/978-3-319-06805-3_2
Download citation
DOI: https://doi.org/10.1007/978-3-319-06805-3_2
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-06804-6
Online ISBN: 978-3-319-06805-3
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)