Two-Dimensional Spin-FET Transistor

Abstract

This work is devoted to the study of spin-polarized transport in semiconductors as a new type of current transmission in semiconductor devices; this allows us to elaborate a 2deg model for the so-called spin-polarized field effect transistor (spin-FET). Spin-FET is a type of high-electron-mobility transistor (HEMT) wherein a spin-polarized current flow through a semiconductor channel between a ferromagnetic source and a drain and the carrier spin in the semiconductor channel can be modulated by a gate voltage and/or a magnetic field. A modification of the magnetic orientation of the source or drain exchange transistor properties. In this chapter, we get the expression of drain current and the associated transconductance in the function of orientations of the spin of electrons at the end of the canal and the magnetization of the drain contact, taking into account the possibility to control the current through the grid voltage. The model is elaborated in the quantum framework, taking into account the spin–orbit (Rashba coupling) interaction at two dimensions.