Influence of Physical Parameters on the Transconductance gm of Channel for the Component Submicron

  • M. DraidiEmail author
  • M. Zaabat
  • A. Boudine
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 156)


The component elements of the field-effect transistors can be grouped into two distinct categories. Extrinsic elements represent different access structures such as parasitic resistances R s and R d. Among the intrinsic elements, the transconductance g m is cited, which reflects by its nature the localized behavior of the physical structure of the transistors. The transconductance g m represents the control mechanism of the transistor; it is the variation of the drain current I ds depending on the gate voltage for a constant drain voltage. In this work, we studied:


Voltage Versus Gate Voltage Access Structure Field Effect Transistor Drain Current 
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Copyright information

© Springer International Publishing Switzerland 2015

Authors and Affiliations

  1. 1.Faculty of Exact Sciences and Natural and Life Sciences, Active Devices and Materials LaboratoryLarbi Ben M’hidi UniversityOum El BouaghiAlgeria

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