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Influence of Physical Parameters on the Transconductance gm of Channel for the Component Submicron

  • M. DraidiEmail author
  • M. Zaabat
  • A. Boudine
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 156)

Abstract

The component elements of the field-effect transistors can be grouped into two distinct categories. Extrinsic elements represent different access structures such as parasitic resistances R s and R d. Among the intrinsic elements, the transconductance g m is cited, which reflects by its nature the localized behavior of the physical structure of the transistors. The transconductance g m represents the control mechanism of the transistor; it is the variation of the drain current I ds depending on the gate voltage for a constant drain voltage. In this work, we studied:

Keywords

Voltage Versus Gate Voltage Access Structure Field Effect Transistor Drain Current 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    Benghalia A, Ahmadpanah M, Baudrand H (Aug 1988) Accurate two-dimensional approach for capacitance calculation in microcoplanar MES transmission lines. Electron Lett 24(16):996–998CrossRefGoogle Scholar
  2. 2.
    Enokit T, Sugitani S, Yamane Y (1990) IEEE Trans Electron Devices 37, p 935–941Google Scholar
  3. 3.
    Golio MJ, Golio JRC (1991) IEEE trans. Microw Theory Tech 39:142–146CrossRefGoogle Scholar
  4. 4.
    Horio K, Yamada T (April 1999) Two dimensional analysis of surface state effects on turn-on characteristics in GaAs MESFET’s. IEEE Trans. Electron Devices ED-46; no. 4Google Scholar
  5. 5.
    Kennis P, Faucon L (June 1981) Rigorous analysis of planar MIS transmission lines. Electron Lett 17(13):454–456Google Scholar
  6. 6.
    Lepaul S (1996) Contribution a la modélisation numérique des composants électroniques aux dimensions nanométriques. Thèse de doctorat, Université de Paris VIGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2015

Authors and Affiliations

  1. 1.Faculty of Exact Sciences and Natural and Life Sciences, Active Devices and Materials LaboratoryLarbi Ben M’hidi UniversityOum El BouaghiAlgeria

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