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Technological Approaches for Growth of Silicon Nanowire Arrays

  • Anatoly Druzhinin
  • Anatoly Evtukh
  • Ihor Ostrovskii
  • Yuriy Khoverko
  • Stepan NichkaloEmail author
  • Stanislav Dvornytskyi
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 156)

Abstract

The chapter deals with the investigation of silicon nanowire formation by combination of low-pressure chemical vapor deposition (LPCVD) and wet etching methods on Si substrate using gold films as mask. The average diameter of Si nanowires grown by LPCVD was about 60 nm. It was shown that using Si-Au droplets as the mask during chemical etching allows to obtain vertically aligned silicon nanowires. The alumina formation process by anodic anodization has been investigated and porous alumina matrix with average diameter of the pores of ~ 50 nm has been obtained. It can be used for the growth of ordered, vertically aligned silicon nanowires by LPCVD technology.

Keywords

Chemical Etching Nanowire Array Anodization Voltage Silicon Nanowires Radial Growth Rate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer International Publishing Switzerland 2015

Authors and Affiliations

  • Anatoly Druzhinin
    • 1
  • Anatoly Evtukh
    • 2
  • Ihor Ostrovskii
    • 1
  • Yuriy Khoverko
    • 1
  • Stepan Nichkalo
    • 1
    Email author
  • Stanislav Dvornytskyi
    • 1
  1. 1.Lviv Polytechnic National UniversityLvivUkraine
  2. 2.V.E. Lashkaryov Institute of Semiconductor Physics NAS of UkraineKyivUkraine

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