Technological Approaches for Growth of Silicon Nanowire Arrays

  • Anatoly Druzhinin
  • Anatoly Evtukh
  • Ihor Ostrovskii
  • Yuriy Khoverko
  • Stepan NichkaloEmail author
  • Stanislav Dvornytskyi
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 156)


The chapter deals with the investigation of silicon nanowire formation by combination of low-pressure chemical vapor deposition (LPCVD) and wet etching methods on Si substrate using gold films as mask. The average diameter of Si nanowires grown by LPCVD was about 60 nm. It was shown that using Si-Au droplets as the mask during chemical etching allows to obtain vertically aligned silicon nanowires. The alumina formation process by anodic anodization has been investigated and porous alumina matrix with average diameter of the pores of ~ 50 nm has been obtained. It can be used for the growth of ordered, vertically aligned silicon nanowires by LPCVD technology.


Chemical Etching Nanowire Array Anodization Voltage Silicon Nanowires Radial Growth Rate 
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  1. 1.
    Greytak AB, Lauhon LJ, Gudiksen MS, Lieber CM (2004) Growth and transport properties of complementary germanium nanowire field-effect transistors. Appl Phys Lett 84:4176–4178CrossRefADSGoogle Scholar
  2. 2.
    Cui Y, Lieber CM (2001) Functional nanoscale electronic devices assembled using silicon nanowire building blocks. Science 291(5505):851–853CrossRefADSGoogle Scholar
  3. 3.
    Dubrovskii VG, Cirlin GE, Ustinov VM (2009) Semiconductor nanowires: Synthesis, properties and applications. Semiconductors 43(12):1585–1628Google Scholar
  4. 4.
    Peng KQ, Xu Y, Wu Y, Yan YJ, Lee ST, Zhu J (2005) Aligned single-crystalline Si nanowire arrays for photovoltaic applications. Small 1:1062–1067CrossRefGoogle Scholar
  5. 5.
    Wang N, Cai Y, Zhang RQ (2008) Growth of nanowires. Mater Sci Eng R 60:1–51Google Scholar
  6. 6.
    Dubrovskii VG, Sibirev NV, Cirlin GE, Harmand JC, Ustinov VM (2006) Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy. Phys Rev 73:021603–021612CrossRefADSGoogle Scholar
  7. 7.
    Givargizov EI (1977) Growth of needle-like and plate crystals from vapour. Nauka, MoscowGoogle Scholar
  8. 8.
    Kashchiev D (2006) Dependence of the growth rate of nanowires on the nanowire diameter. Cryst Growth Des 16:1154–1156CrossRefGoogle Scholar
  9. 9.
    Wade TL, Cojocaru CS, Wegrowe J-E, Pribat D (2008) Nanoporous alumina templates for nanowire electron devices. In: Rahman F (ed) Nanostructures in electronics and photonics. Pan Stanford Publishing Pvt. Ltd., Singapore, pp 42–84Google Scholar
  10. 10.
    Belov AN, Gavrilov SA, Shevyakov VI (2006) Peculiarities of nanostructured anodic alumina formation. Rus Nanotechnol 1–2:223–227 (in Russian).Google Scholar
  11. 11.
    Patermarakis G, Moussoutzanis K (2002) Interpretation of the promoting effect of sulphate salt additives on the development of non-uniform pitted porous anodic Al2O3 films in H2SO4 electrolyte by a transport phenomenon analysis theory. Corros Sci 44:1737–1753CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2015

Authors and Affiliations

  • Anatoly Druzhinin
    • 1
  • Anatoly Evtukh
    • 2
  • Ihor Ostrovskii
    • 1
  • Yuriy Khoverko
    • 1
  • Stepan Nichkalo
    • 1
    Email author
  • Stanislav Dvornytskyi
    • 1
  1. 1.Lviv Polytechnic National UniversityLvivUkraine
  2. 2.V.E. Lashkaryov Institute of Semiconductor Physics NAS of UkraineKyivUkraine

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