Abstract
Leon O. Chua introduced the memristor as the fourth circuit element to complete the set of fundamental passive two-terminal elements in 1971. For a long time it seemed as if memristors were just toys in the sandbox of network theorists. The situation abruptly changed in 2008 when scientists from HP reported on a nanoelectronic device, which showed a memristive behaviour. Main hopes for new opportunities and circuit concepts in the transition to increasingly smaller integrated circuits are going to be related to this discovery. For an examination of these possibilities by means of simulation, a large number of memristor models has been developed in recent years. A special property of the behavioural models of memristive nanoelectronic devices is the restricted range of internal state variables. A number of tricky solutions has been developed up to now to handle this problem. In this section we present a straightforward solution for this problem within the framework of hybrid dynamical systems.
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Acknowledgments
The work reported in this chapter was done within the project CoolEDesign that is part of the Leading-Edge Cluster “Cool Silicon” which is sponsored by the German Federal Ministry of Education and Research (BMBF) within the scope of the Leading-Edge Cluster Competition.
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Haase, J., Lange, A. (2015). Hybrid Dynamical Systems for Memristor Modelling. In: Louërat, MM., Maehne, T. (eds) Languages, Design Methods, and Tools for Electronic System Design. Lecture Notes in Electrical Engineering, vol 311. Springer, Cham. https://doi.org/10.1007/978-3-319-06317-1_5
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