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Evaluation of Heteroepitaxially Grown Semipolar {20-21} GaN on Patterned Sapphire Substrate

  • Yasuhiro Hashimoto
  • Masakazu Koyama
  • Takashi Inagaki
  • Keisuke Yamane
  • Narihito Okada
  • Kazuyuki TadatomoEmail author
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 306)

Abstract

Semipolar {20-21} GaN layers were grown on {22-43} patterned sapphire substrates by metal–organic vapor phase epitaxy using a two-step growth method. We succeeded in suppressing −c-plane growth at growth temperatures of 1,000 and 900 °C for the first and second steps, respectively; the resulting structure exhibited a large reduction in the number of stacking faults upon optimizing the growth conditions. Photoluminescence measurements showed an increase in the near-band-edge emission and a decrease in deep-center emission when the two-step growth was performed at higher V/III ratio.

Keywords

MOVPE GaN PSS {20-21} Stacking fault PL 

Notes

Acknowledgments

This work was partly supported by the “Regional Innovation Cluster Program” (Global Type), and a Grant-in-Aid for Young Scientists B # 24,760,012 funded by the Ministry of Education, Culture, Sports, Science and Technology, Japan

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Yasuhiro Hashimoto
    • 1
  • Masakazu Koyama
    • 1
  • Takashi Inagaki
    • 1
  • Keisuke Yamane
    • 1
  • Narihito Okada
    • 1
  • Kazuyuki Tadatomo
    • 1
    Email author
  1. 1.Graduate School of Science and EngineeringYamaguchi UniversityYamaguchiJapan

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