Abstract
Semipolar {20-21} GaN layers were grown on {22-43} patterned sapphire substrates by metal–organic vapor phase epitaxy using a two-step growth method. We succeeded in suppressing −c-plane growth at growth temperatures of 1,000 and 900 °C for the first and second steps, respectively; the resulting structure exhibited a large reduction in the number of stacking faults upon optimizing the growth conditions. Photoluminescence measurements showed an increase in the near-band-edge emission and a decrease in deep-center emission when the two-step growth was performed at higher V/III ratio.
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Acknowledgments
This work was partly supported by the “Regional Innovation Cluster Program” (Global Type), and a Grant-in-Aid for Young Scientists B # 24,760,012 funded by the Ministry of Education, Culture, Sports, Science and Technology, Japan
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Hashimoto, Y., Koyama, M., Inagaki, T., Yamane, K., Okada, N., Tadatomo, K. (2014). Evaluation of Heteroepitaxially Grown Semipolar {20-21} GaN on Patterned Sapphire Substrate. In: Tutsch, R., Cho, YJ., Wang, WC., Cho, H. (eds) Progress in Optomechatronic Technologies. Lecture Notes in Electrical Engineering, vol 306. Springer, Cham. https://doi.org/10.1007/978-3-319-05711-8_3
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DOI: https://doi.org/10.1007/978-3-319-05711-8_3
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