Advertisement

Thermal Manipulation Utilizing Micro-cantilever Probe in Scanning Electron Microscopy

  • Anthony Yu-Tung Wang
  • Cheng-Chun Huang
  • Yao-Chuan Tsai
  • Ming-Dao Wu
  • Dao Liang
  • Po-Jen Shih
  • Wen-Pin ShihEmail author
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 306)

Abstract

We present a novel design for a sensitive temperature micro-probe, situated at the tip of an atomic force microscopy cantilever. The temperature-sensing element utilizes a platinum resistance thermometer, which is well-known for its measurement reproducibility and chemical inertness. The probe is fabricated using conventional clean room techniques and then processed by focused ion beam milling and material deposition. The probe is able to be mounted to a movable platform inside a scanning electron microscope, enabling simultaneous characterization of a sample’s surface temperature and material topology. Furthermore, by reversing the detection mechanism of the platinum resistance thermometer, localized sample surface heating can be achieved, allowing small-scale sample manipulation and characterization. Such an ability to simultaneously characterize a material’s surface topology and temperature has not been previously reported in literature, and lends great practicality in the fields of materials research and integrated circuits diagnostics.

Keywords

Micro-cantilever Thermometer Focused ion beam Atomic force microscopy 

Notes

Acknowledgments

The author would like to thank the co-operative education program of the University of Waterloo, Canada for the opportunity to conduct research abroad at the National Taiwan University. The author would also like to thank the Tiny Machines and Mechanics Laboratory and the Nano-Electro-Mechanical-Systems Research Center of National Taiwan University for hosting this project, and providing funding and the necessary facilities to carry out the research. This project was supported by the National Science Council of Taiwan, under contract No. 102-2221-E-002-242.

References

  1. 1.
    Moore GE (1965) Cramming more components into integrated circuits. Electronics 38:114–117Google Scholar
  2. 2.
    Liu TJK (2012) Bulk CMOS scaling to the end of the roadmap. Presentation (June 2012) Symposium on VLSI CircuitsGoogle Scholar
  3. 3.
    Rotem E, Hermerding J, Aviad C, Harel C (2007) Temperature measurement in the Intel CoreTM Duo processor. Technical report, Intel Corporation (2007)Google Scholar
  4. 4.
    De Wolf I (1996) Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits. Semicond Sci Technol 11:139–154CrossRefGoogle Scholar
  5. 5.
    Park H, Jones KS, Slinkman JA, Law ME (1993) The effects of strain on dopant diffusion in silicon. In: Technical digest, international electronic devices meeting, international electronic devices meeting (IEDM), IEEE Conference Publications (December 1993)Google Scholar
  6. 6.
    Degraeve R, De Wolf I, Groeseneken G, Maes H (1994) Analysis of externally imposed mechanical stress effects on the hot-carrier-induced degradation of MOSFET’s. In: 32nd annual reliability physics symposium, IEEE, 32nd annual proceedings, IEEE internationalGoogle Scholar
  7. 7.
    Hu SM (1991) Stress-related problems in silicon technology. J Appl Phys 70:R53–R79CrossRefGoogle Scholar
  8. 8.
    Christofferson J, Maize K, Ezzahri Y, Shabani J, Wang X, Baskin AS (2007) Microscale and nanoscale thermal characterization techniques. In: International conference on thermal issues in emerging technologies: theory and application—THETAGoogle Scholar
  9. 9.
    Binnig G, Quate CF (1986) Atomic force microscope. Phys Rev Lett 56:930–933CrossRefGoogle Scholar
  10. 10.
    Kaupp G (2006) Atomic force microscopy, scanning nearfield optical microscopy and nanoscratching. Springer, Berlin, pp 1–86Google Scholar
  11. 11.
    le Fébre AJ, Abelmann L, Lodder JC (2008) Field emission at nanometer distances for high-resolution positioning. J Vac Sci Technol B 26:724–729CrossRefGoogle Scholar
  12. 12.
    Sulchek TA, Qiu SR, Noga DJ, Schoenwald DK (2012) Molded microfluidic fluid cell for atomic force microscopy . https://www.google.com/patents/US8214917
  13. 13.
    Schoenwald K, Peng ZC, Noga D, Qiu SR, Sulchek T (2010) Integration of atomic force microscopy and a microfluidic liquid cell for aqueous imaging and force spectroscopy. Rev Sci Instrum 81:053704CrossRefGoogle Scholar
  14. 14.
    Cutolo A (1998) Selected contactless optoelectronic measurements for electronic applications (invited). Rev Sci Instrum 69:337–360CrossRefGoogle Scholar
  15. 15.
    Altet J, Dilhaire S, Volz S, Rampnoux JM, Rubio A, Grauby S, Lopez LDP, Claeys W, Saulnier JB (2002) Four different approaches for the measurement of IC surface temperature: application to thermal testing. Microelectron J 33:689–696CrossRefGoogle Scholar
  16. 16.
    Altet J (2006) Dynamic surface temperature measurements in ICs. Proc IEEE 94:1519–1533CrossRefGoogle Scholar
  17. 17.
    Kölzer J, Oesterschulze E, Deboy G (1996) Thermal imaging and measurement techniques for electronic materials and devices. Microelectron Eng 31:251–270CrossRefGoogle Scholar
  18. 18.
    International Electrotechnical Commission: IEC 60751: Industrial platinum resistance thermometers and platinum temperature sensorsGoogle Scholar
  19. 19.
    ASTM International: ASTM E1137: Standard specification for industrial platinum resistance thermometersGoogle Scholar
  20. 20.
    Yamazawa K, Anso K, Widiatmo JV, Tamba J, Arai M (2011) Evaluation of small-sized platinum resistance thermometers with ITS-90 characteristics. Int J Thermophys 32:2397–2408CrossRefGoogle Scholar
  21. 21.
    Yang I, Song CH, Gam KS, Kim YG (2012) Long-term stability of standard platinum resistance thermometers in a range between 0.01 °C and 419.527 °C. Metrologia 49:803–808CrossRefGoogle Scholar
  22. 22.
    Langlands RC (1964) A stable copper resistance thermometer for field use. J Sci Instrum 41:478CrossRefGoogle Scholar
  23. 23.
    Bret T, Utke I, Hoffmann P, Abourida M, Doppelt P (2006) Electron range effects in focused electron beam induced deposition of 3D nanostructures. Microelectron Eng 83:1482–1486CrossRefGoogle Scholar
  24. 24.
    Tripathi SK, Shukla N, Kulkarni VN (2008) Correlation between ion beam parameters and physical characteristics of nanostructures fabricated by focused ion beam. Nucl Instrum Methods Phys Res B 266:1468–1474CrossRefGoogle Scholar
  25. 25.
    Tripathi SK, Kulkarni VN (2009) Evolution of surface morphology of nano and micro structures during focused ion beam induced growth. Nucl Instrum Methods Phys Res B 267:1381–3385CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Anthony Yu-Tung Wang
    • 1
    • 2
  • Cheng-Chun Huang
    • 2
  • Yao-Chuan Tsai
    • 2
  • Ming-Dao Wu
    • 2
  • Dao Liang
    • 2
  • Po-Jen Shih
    • 3
  • Wen-Pin Shih
    • 2
    Email author
  1. 1.University of WaterlooWaterlooCanada
  2. 2.National Taiwan UniversityTaipei CityTaiwan
  3. 3.National University of KaohsiungKaohsiung CityTaiwan

Personalised recommendations