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Characterization of Local Structures in Plasma Deposited Semiconductors by X-ray Absorption Spectroscopy

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Complex Plasmas

Part of the book series: Springer Series on Atomic, Optical, and Plasma Physics ((SSAOPP,volume 82))

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Abstract

Extended X-ray-Absorption Fine-Structure Spectroscopy (EXAFS) has been used to investigate the subtle local structural variations in plasma deposited semiconductors. Grazing incidence geometry EXAFS is a very effective tool to study the surface layers. Since EXAFS is an element specific sensitive local structural probe, it is advantageous to commonly used structural characterization techniques where there is no long-range crystalline order in material. EXAFS can provide crucial information deposition or post-deposition induced crystallographic structural modifications. The information extracted from EXAFS can be used as an important feedback for the thin film growth mechanisms. In this chapter the fundamental principles of EXAFS will be introduced. The data reduction and analyses with the structural model calculations will be discussed. The application of the EXAFS in plasma deposited silicon wafers and plasma-plume deposited high-k dielectric thin films will be presented.

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Acknowledgments

This work was supported by Research Corporation Award # CC6405 and NSF DMI 0420952, and SEMATECH.

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Authors and Affiliations

  1. Department of Physics, Seton Hall University, South Orange, NJ, 07079, USA

    M. Alper Sahiner

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  1. M. Alper Sahiner
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Correspondence to M. Alper Sahiner .

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Editors and Affiliations

  1. Astrophysik Lehrstuhl Statistische Physik, Christian-Albrechts-Universität zu Kiel Institut für Theoretische Physik und, Kiel, Germany

    Michael Bonitz

  2. Seton Hall University, South Orange, New Jersey, USA

    Jose Lopez

  3. Polytechnic Institute of New York University, Brooklyn, New York, USA

    Kurt Becker

  4. Institut für Theoretische Physik und Astrophysik, Christian-Albrechts-Universität zu Kiel, Kiel, Germany

    Hauke Thomsen

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Sahiner, M.A. (2014). Characterization of Local Structures in Plasma Deposited Semiconductors by X-ray Absorption Spectroscopy. In: Bonitz, M., Lopez, J., Becker, K., Thomsen, H. (eds) Complex Plasmas. Springer Series on Atomic, Optical, and Plasma Physics, vol 82. Springer, Cham. https://doi.org/10.1007/978-3-319-05437-7_9

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