Abstract
The dilute ferromagnetic semiconductor GaMnAs provides a great promise for its application in spintronics, which combines two degrees of freedom: charge and spin. Mn ions which substitute Ga sublattice sites provide both local magnetic moments and itinerant holes. The magnetic properties of GaMnAs can be controlled by manipulating free carriers via electrical gating. However, the preparation of ferromagnetic GaMnAs presents a big challenge due to the low solubility of Mn in GaAs. To overcome the low solid solubility limit of transition metal dopants in semiconductors, one needs highly nonequilibrium methods to introduce enough dopants and a short-time annealing to activate them. Both ion implantation and pulsed-laser (or flash-lamp) annealing occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants. The subsequent short-time annealing deposits energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Such a nonequilibrium process maintains the supersaturation induced by ion implantation. In this chapter, we review the application of sub-second annealing in the activation of Mn implanted GaAs as well as GaP.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
T. Jungwirth, J. Sinova, J. Mašek, J. Kučera, A.H. MacDonald, Theory of ferromagnetic (III, Mn)V semiconductors. Rev. Mod. Phys. 78, 809–864 (2006)
J.K. Furdyna, Diluted magnetic semiconductors. J. Appl. Phys. 64, R29–R64 (1988)
A. Haury, A. Wasiela, A. Arnoult, J. Cibert, S. Tatarenko, T. Dietl, Y. Merle d’Aubigné, Observation of a ferromagnetic transition induced by two-dimensional hole gas in modulation-doped CdMnTe quantum wells. Phys. Rev. Lett. 79, 511–514 (1997)
R. Janisch, P. Gopal, N.A. Spaldin, Transition metal-doped TiO2 and ZnO—present status of the field. J. Phys. Condens. Matter 17, R657–R689 (2005)
H. Munekata, H. Ohno, S. Vonmolnar, A. Segmuller, L.L. Chang, L. Esaki, Diluted magnetic III–V semiconductors. Phys. Rev. Lett. 63, 1849–1852 (1989)
H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, (Ga, Mn)As: a new diluted magnetic semiconductor based on GaAs. Appl. Phys. Lett. 69, 363–365 (1996)
R.P. Campion, K.W. Edmonds, L.X. Zhao, K.Y. Wang, C.T. Foxon, B.L. Gallagher, C.R. Staddon, High-quality GaMnAs films grown with arsenic dimers. J. Cryst. Growth 247, 42–48 (2003)
K.M. Yu, W. Walukiewicz, T. Wojtowicz, I. Kuryliszyn, X. Liu, Y. Sasaki, J.K. Furdyna, Effect of the location of Mn sites in ferromagnetic Ga1−x Mn x As on its Curie temperature. Phys. Rev. B 65, 201303 (2002)
K. Olejník, M.H.S. Owen, V. Novák, J. Mašek, A.C. Irvine, J. Wunderlich, T. Jungwirth, Enhanced annealing, high Curie temperature, and low-voltage gating in (Ga, Mn)As: a surface oxide control study. Phys. Rev. B 78, 054403 (2008)
S.U. Campisano, G. Foti, P. Baeri, M.G. Grimaldi, E. Rimini, Solute trapping by moving interface in ion-implanted silicon. Appl. Phys. Lett. 37, 719–722 (1980)
J. Shi, J.M. Kikkawa, R. Proksch, T. Schaffer, D.D. Awschalom, G. Medeirosribeiro, P.M. Petroff, Assembly of submicrometer ferromagnets in gallium-arsenide semiconductors. Nature 377, 707–710 (1995)
J. Shi, J.M. Kikkawa, D.D. Awschalom, G. Medeiros-Ribeiro, P.M. Petroff, K. Babcock, Magnetic properties and imaging of Mn-implanted GaAs semiconductors. J. Appl. Phys. 79, 5296–5298 (1996)
P.J. Wellmann, J.M. Garcia, J.L. Feng, P.M. Petroff, Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs. Appl. Phys. Lett. 71, 2532–2534 (1997)
W. Skorupa, T. Gebel, R.A. Yankov, S. Paul, W. Lerch, D.F. Downey, E.A. Arevalo, Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing. J. Electrochem. Soc. 152, G436–G440 (2005)
W.K. Chu, J.W. Mayer, M.A. Nicolet, Backscattering Spectrometry (Academic Press, New York, 1978)
D. Bürger, S. Zhou, J. Grenzer, H. Reuther, W. Anwand, V. Gottschalch, M. Helm, H. Schmidt, The influence of annealing on manganese implanted GaAs films. Nucl. Instrum. Methods B 267, 1626 (2009)
F.L. Bloom, A.C. Young, R.C. Myers, E.R. Brown, A.C. Gossard, E.G. Gwinn, Tunneling through MnAs particles at a GaAs p+n+ junction. J. Vac. Sci. Techol. B 24, 1639–1643 (2006)
S.S. Kular, B.J. Sealy, K.G. Stephens, D.R. Chick, Q.V. Davis, J. Edwards, Pulsed laser annealing of zinc implanted GaAs. Electron. Lett. 14, 85–87 (1978)
C.W. White, S.R. Wilson, B.R. Appleton, F.W. Young Jr., Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon. J. Appl. Phys. 51, 738–749 (1980)
M.A. Scarpulla, O.D. Dubon, K.M. Yu, O. Monteiro, M.R. Pillai, M.J. Aziz, M.C. Ridgway, Ferromagnetic GaMnAs produced by ion implantation and pulsed-laser melting. Appl. Phys. Lett. 82, 1251–1253 (2003)
M.A. Scarpulla, B.L. Cardozo, R. Farshchi, W.M. Hlaing Oo, M.D. McCluskey, K.M. Yu, O.D. Dubon, Ferromagnetism in Ga1−x Mn x P: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band. Phys. Rev. Lett. 95, 207204 (2005)
D. Bürger, S. Zhou, M. Pandey, C.S. Viswanadham, J. Grenzer, O. Roshchupkina, W. Anwand, H. Reuther, V. Gottschalch, M. Helm, H. Schmidt, Application of pulsed laser annealing to ferromagnetic GaMnAs. Phys. Rev. B 81, 115202 (2010)
T. Omiya, F. Matsukura, T. Dietl, Y. Ohno, T. Sakon, M. Motokawa, H. Ohno, Magnetotransport properties of (Ga, Mn)As investigated at low temperature and high magnetic field. Physica E 7, 976 (2000)
H. Ohno, H. Munekata, T. Penney, S. von Molnár, L.L. Chang, Magnetotransport properties of p-type (In, Mn)As diluted magnetic III–V semiconductors. Phys. Rev. Lett. 68, 2664–2667 (1992)
T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, Magnetic and magnetotransport properties of new III–V diluted magnetic semiconductors: GaMnAs. J. Appl. Phys. 81, 4865–4867 (1997)
F. Matsukura, H. Ohno, A. Shen, Y. Sugawara, Transport properties and origin of ferromagnetism in (Ga, Mn)As. Phys. Rev. B 57, R2037 (1998)
X. Liu, Y. Sasaki, J.K. Furdyna, Ferromagnetic resonance in Ga1−x Mn x As: effects of magnetic anisotropy. Phys. Rev. B 67, 205204 (2003)
M.A. Scarpulla, R. Farshchi, P.R. Stone, R.V. Chopdekar, K.M. Yu, Y. Suzuki, O.D. Dubon, Electrical transport and ferromagnetism in Ga1−x Mn x As synthesized by ion implantation and pulsed-laser melting. J. Appl. Phys. 103, 073913 (2008)
N. Theodoropoulou, A.F. Hebard, M.E. Overberg, C.R. Abernathy, S.J. Pearton, S.N.G. Chu, R.G. Wilson, Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga,Mn)P:C. Phys. Rev. Lett. 89, 107203 (2002)
I.G. Bucsa, R.W. Cochrane, S. Roorda, Segregation and formation of MnP particles during rapid thermal annealing of Mn-implanted InP and GaP. J. Appl. Phys. 106, 013914 (2009)
P.N. Hai, S. Yada, M. Tanaka, Phase decomposition diagram of magnetic alloy semiconductor. J. Appl. Phys. 109, 073919 (2011)
N. Peng, C. Jeynes, M.J. Bailey, D. Adikaari, V. Stolojan, R.P. Webb, High concentration Mn ion implantation in Si. Nucl. Instrum. Methods B 267, 1623 (2009)
S. Zhou, D. Bürger, A. Mücklich, C. Baumgart, W. Skorupa, C. Timm, P. Oesterlin, M. Helm, H. Schmidt, Hysteresis in the magnetotransport of manganese-doped germanium: evidence for carrier-mediated ferromagnetism. Phys. Rev. B 81, 165204 (2010)
D. Bürger, S. Zhou, M. Höwler, X. Ou, Gy.J. Kovacs, H. Reuther, A. Mücklich, W. Skorupa, M. Helm, H. Schmidt, Hysteretic anomalous Hall effect in a ferromagnetic, Mn-rich Ge:Mn nanonet. Appl. Phys. Lett. 100, 012406 (2012)
D. Bürger, M. Seeger, S. Zhou, W. Skorupa, H. Schmidt, Transition metal diffusion in diluted magnetic Si and GaAs prepared by pulsed laser processing. J. Appl. Phys. 111, 054914 (2012)
Acknowledgements
Financial support from the Helmholtz-Gemeinschaft Deutscher Forschungszentren (HGF-VH-NG-713) is gratefully acknowledged. H.S. would like to thank the Deutsche Forschungsgemeinschaft for funding (SCHM1663/4).
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2014 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Zhou, S., Bürger, D., Schmidt, H. (2014). Application of Sub-second Annealing for Diluted Ferromagnetic Semiconductors. In: Skorupa, W., Schmidt, H. (eds) Subsecond Annealing of Advanced Materials. Springer Series in Materials Science, vol 192. Springer, Cham. https://doi.org/10.1007/978-3-319-03131-6_15
Download citation
DOI: https://doi.org/10.1007/978-3-319-03131-6_15
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03130-9
Online ISBN: 978-3-319-03131-6
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)