Silicon Surface Passivation by Al2O3 film using Atomic Layer Deposition

  • P. K. Singh
  • Vandana
  • Neha Batra
  • Jhuma Gope
  • CMS Rauthan
  • Mukul Sharma
  • Ritu Srivastava
  • S. K. Srivastava
  • P. Pathi
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Silicon surface passivation is studied using Al2O3 thin film deposited by thermal process using atomic layer deposition (ALD) method. Minority carrier lifetime measurements showed that the film passivate the silicon surface effectively. Capacitance–voltage measurement confirms the activation of negative fixed charges after sintering at 400 °C.

Keywords

Passivation Al2O3 ALD 

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Notes

Acknowledgments

Authors would like to acknowledge CSIR-TAPSUN program for funding NWP-55 project. One of the authors, NB acknowledges CSIR for research fellowship.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • P. K. Singh
    • 1
  • Vandana
    • 1
  • Neha Batra
    • 1
  • Jhuma Gope
    • 1
  • CMS Rauthan
    • 1
  • Mukul Sharma
    • 1
  • Ritu Srivastava
    • 1
  • S. K. Srivastava
    • 1
  • P. Pathi
    • 1
  1. 1.Network of Institutes for Solar Energy (NISE), Silicon Solar Cell Group, CSIR-National Physical LaboratoryNew DehiIndia

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