Abstract
Full chip resist simulation is a critical step in the lithography simulation of advanced CMOS technology nodes. The semi-empirical compact models (such as compact model 1, also known as CM1) are generally used in the semiconductor industries for resist simulation since the physical models are computationally expensive. The CM1 model considers physical effects of the resist process and uses a constant threshold on a two dimensional resist surface to extract the critical dimension (CD). However, the required threshold for different samples may vary over a range and therefore a constant threshold value may not hit an optimal solution for all the samples. In this paper, we propose a clustering based approach to enhance the accuracy of CM1 model and resist simulation. In this proposed approach, various attributes of the lithographic samples such as aerial image and pattern density are used to bin the samples into different groups (clusters). The CM1 model is then used to calibrate parameters individually for each group. This approach is verified by doing the resist simulation on one of the layers of 14 nm CMOS technology and the results show good improvement in model accuracy.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Frederick H. Dill, IEEE Transactions on Electron Devices, Vol. ED-22, No. 7, July, 1975.
Chris A. Mack, Proceedings of SPIE Vol. 2197/501, 1994.
John Randall et al., Microelectronic Engineering 46, 59-63, 1999.
Yuri Granik et al., Proceedings of SPIE Vol. 6154, 61543E − 1, 2006.
Yuri Granik et al., Proceedings of SPIE Vol. 6520, 652043-1, 2007.
Tapas Kanungo et al., IEEE Transactions on Pattern Analysis and Machine Intelligence, Vol. 24, No. 7, July 2002.
Amr Abdo et al., Proceedings of SPIE Vol. 7640, 76401E − 1, 2010.
Amr Abdo et al., Proceedings of SPIE Vol. 6349, 634923-1, 2006.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2014 Springer International Publishing Switzerland
About this paper
Cite this paper
Kumar, P., Barai, S., Srinivasan, B., Mohapatra, N.R. (2014). Process Model Accuracy Enhancement Using Cluster Based Approach. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_9
Download citation
DOI: https://doi.org/10.1007/978-3-319-03002-9_9
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
eBook Packages: Earth and Environmental ScienceEarth and Environmental Science (R0)