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Comparison of Incorporation of Na via In-situ and Ex-situ Modes for the Realization of Device Quality CIGSe Thin Films

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

Essentiality of Na incorporation into the CIGSe films is required in order to have highly crystalline films along with grain boundaries’ passivation. Our work focuses on comparison of two different methods to ensure the optimized sodium incorporation into the film to obtain device-quality material and thus high conversion efficiencies.

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Authors and Affiliations

  1. CSIR-Network of Institutes for Solar Energy, National Physical Laboratory, New Delhi, India

    Parul Chawla, Suresh Chand & Shailesh N. Sharma

  2. Amity Institute of Nanotechnology, Noida, U.P., India

    Son Singh & Parth Vashishtha

Authors
  1. Parul Chawla
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  2. Son Singh
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  3. Parth Vashishtha
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  4. Suresh Chand
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  5. Shailesh N. Sharma
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Corresponding author

Correspondence to Shailesh N. Sharma .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Chawla, P., Singh, S., Vashishtha, P., Chand, S., Sharma, S.N. (2014). Comparison of Incorporation of Na via In-situ and Ex-situ Modes for the Realization of Device Quality CIGSe Thin Films. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_88

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