Resistive Switching in MIM Capacitors Using Porous Anodic Alumina

  • K. Mukherjee
  • S. Upreti
  • A. Bag
  • S. Mallik
  • M. Palit
  • S. Chattopadhyay
  • C. K. Maiti
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Bipolar resistive switching phenomena have been observed in TiN/AAO/TiN structures. Porous anodic aluminium oxide (AAO) membranes with pore diameters ranging from 15 to 50 nm were prepared by two step anodization in oxalic acid under specific reaction condition on TiN layer. The nanochannel arrays of AAO membranes were characterized with field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). AAO membrane was sandwiched between two conducting TiN layers to fabricate MIM structures. Good stability in resistive switching behaviour up to several cycles and a ~ 2x resistance ratio has been achieved.

Keywords

AAO Porous anodic alumina Resistive switching 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • K. Mukherjee
    • 1
  • S. Upreti
    • 1
  • A. Bag
    • 1
  • S. Mallik
    • 1
  • M. Palit
    • 2
  • S. Chattopadhyay
    • 2
    • 3
  • C. K. Maiti
    • 1
  1. 1.VLSI Eng. Lab., Department of Electronics and ECEIndian Institute of TechnologyKharagpurIndia
  2. 2.Centre for Research in NanoScience and NanotechnologyUniversity of CalcuttaKolkataIndia
  3. 3.Department of Electronic ScienceUniversity of CalcuttaKolkataIndia

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