Skip to main content

Resistive Switching in MIM Capacitors Using Porous Anodic Alumina

  • Conference paper
Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

Bipolar resistive switching phenomena have been observed in TiN/AAO/TiN structures. Porous anodic aluminium oxide (AAO) membranes with pore diameters ranging from 15 to 50 nm were prepared by two step anodization in oxalic acid under specific reaction condition on TiN layer. The nanochannel arrays of AAO membranes were characterized with field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). AAO membrane was sandwiched between two conducting TiN layers to fabricate MIM structures. Good stability in resistive switching behaviour up to several cycles and a ~ 2x resistance ratio has been achieved.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 259.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Hardcover Book
USD 329.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. M. N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park, and M. Mitkova, in Proc. IEEE Non-Volatile Memory Technology Symposium, 2004, 10 (2004). [doi:10.1109/NVMT.2004.1380792]

  2. I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U.-In. Chung, and J. T. Moon, in Proc. IEEE International Electron Devices Meeting, 2004. IEDM Technical Digest, 587 (2004). [doi:10.1109/IEDM.2004.1419228]

  3. Y. Watanabe, J. G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, and A. Beck, Appl. Phys. Lett., 78, 3738 (2001). [doi:10.1063/1.1377617]

    Article  Google Scholar 

  4. W. L. Kwan, R. J. Tseng, W. Wu, Q. Pei, Y. Yang, in Proc. IEEE International Electron Devices Meeting, 2007. IEDM Technical Digest, 237 (2007). [doi:10.1109/IEDM.2007.4418911]

  5. H. Kanaya, K. Tomioka, T. Matsushita, M. Omura, T. Ozaki et al., in Proc. Symposium on VLSI Technology, 2004. Digest of Technical Papers. 2004, 150 (2004). [doi:10.1109/VLSIT.2004.1345446]

  6. S. Lai, in Proc. IEEE International Electron Devices Meeting, 2003. IEDM ‘03 Technical Digest, 10.1.1 (2003). [doi:10.1109/IEDM.2003.1269271]

  7. R. Sezi, A. Walter, R. Engl, A. Maltenberger, J. Schumann, M. Kund, and C. Dehm, in Proc. IEEE International Electron Devices Meeting, 2003. IEDM ‘03 Technical Digest, 10.2.1 (2003). [doi:10.1109/IEDM.2003.1269272]

  8. A. R. Sitaram, D. W. Abraham, C. Alof, D. Braun, S. Brown et al., in Proc. Symposium on VLSI Technology, 2003. Digest of Technical Papers. 2003, 15 (2003). [doi:10.1109/VLSIT.2003.1221063]

  9. L. O. Chua, IEEE Trans. Circuit Theory, 18, 507 (1971). [doi: 10.1109/TCT.1971.1083337]

    Article  Google Scholar 

  10. S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, and W. Lu, Nano Lett., 10, 1297 (2010). [doi:10.1021/nl904092h]

    Article  Google Scholar 

  11. L. O. Chua and S. M. Kang, Proceedings of the IEEE, 64, 209 (1976). [doi:10.1109/PROC.1976.10092]

    Article  Google Scholar 

  12. A. Makarov, V. Sverdlov, and S. Selberherr, Microelectron. Reliab., 52, 628 (2012). [doi:10.1016/j.microrel.2011.10.020]

    Article  Google Scholar 

  13. H. Shima, F. Takano, H. Muramatsu, H. Akinaga, Y. Tamai, I. H. Inque, and H. Takagi, Appl. Phys. Lett., 93, 113504 (2008). [doi: 10.1063/1.2982426]

    Article  Google Scholar 

  14. E. Gomar-Nadal, J. Puigmartı´-Luis, and D. B. Amabilino, Chem. Soc. Rev., 37, 490 (2008). [doi:10.1039/B703825A]

    Article  Google Scholar 

  15. J. J. Gooding, F. Mearns, W. Yang, and J. Liu, Electroanalysis, 15, 81 (2003). [doi:10.1002/elan.200390017]

    Article  Google Scholar 

  16. X. Zhao, U.-J. Lee, S.-K. Seo, and K.-H. Lee, Mat. Sci. Eng.: C, 29, 1156 (2009). [doi:10.1016/j.msec.2008.09.042]

    Article  Google Scholar 

  17. G. K. Mor, K. Shankar, M. Paulose, O. K. Varghese, and C. A. Grimes, Nano Lett., 6, 215 (2006). [doi:10.1021/nl052099j]

    Article  Google Scholar 

  18. A. K. Kasi, J. K. Kasi, N. Afzulpurkar, E. Bohez, A. Tuantranont, and B. Mahaisavariya, 3rd International Conference on Communications and Electronics (ICCE), 2010, 98 (2010). [doi: 10.1109/ICCE.2010.5670689]

  19. A. P. Li, F. Müller, A. Birner, K. Nielsch, and U. Gösele, J. Appl. Phys., 84, 6023 (1998). [doi:10.1063/1.368911]

    Article  Google Scholar 

  20. K. Nielsch, J. Choi, K. Schwirn, R. B. Wehrspohn, and U. Gösele, Nano Lett., 2, 677 (2002). [doi:10.1021/nl025537k]

    Article  Google Scholar 

  21. H. Masuda, and K.Fukuda, Science, 268, 1466 (1995). [doi: 10.1126/science.268.5216.1466]

    Article  Google Scholar 

  22. S. Otsuka, T. Shimizu, S. Shingubara, N. Iwata, T. Watanabe, Y. Takano, and K. Takase, ECS Trans., 50, 49 (2013). [doi: 10.1149/05034.0049ecst]

    Article  Google Scholar 

  23. J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol., 3, 429 (2008). [doi:10.1038/nnano.2008.160]

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to K. Mukherjee .

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2014 Springer International Publishing Switzerland

About this paper

Cite this paper

Mukherjee, K. et al. (2014). Resistive Switching in MIM Capacitors Using Porous Anodic Alumina. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_8

Download citation

Publish with us

Policies and ethics