Abstract
We present a multi-scale methodology for the modeling of charge control in multigate field-effect-transistors (MuGFETs) comprising alternative channel materials, including heterostructures. Using SiGe and Ge as examples, we will show how bandstructure calculations for material parameters may be connected to technology-computer-aided design (TCAD) simulations for the ideal charge–voltage characteristics. Lastly, we outline a custom simulation tool that includes interface and border trap effects in addition to usual electrostatics and quantization.
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Acknowledgments
The authors thank Mr. Hardik Mehta, Ms. Sindhu Hari, Prof. Souvik Mahapatra, Dr. A. Nainani, Dr. M. Abraham, Dr. L. Smith, Dr. F.O. Heinz, and Dr. V. Moroz for helpful discussions. The authors acknowledge support from the Centre of Excellence in Nanoelectronics at IIT Bombay (funded by the Department of Electronics and Information Technology), Applied Materials Inc. and Synopsys Inc.
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Vaidya, D., Sant, S., Hegde, A., Lodha, S., Ganguly, U., Ganguly, S. (2014). Modeling Charge Control in Heterostructure Nanoscale Transistors. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_74
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DOI: https://doi.org/10.1007/978-3-319-03002-9_74
Publisher Name: Springer, Cham
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