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Advanced AlGaN/GaN Resonant Tunneling Diode on Silicon Substrate for Negligible Scattering and Polarization effects

  • Subhra Chowdhury
  • Anirban Santara
  • Partha Mukhopadhyay
  • Dhrubes Biswas
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

In this work we have proposed an advanced AlGaN/GaN resonant tunneling diode (RTD) structure on silicon substrate which introduces modulation doped emitter collector regions and graded spacer layers. An analytical model has been presented to predict the variation of transmission coefficient (Tc) with different scattering phenomena. The physical interpretations of this structure define negligible scattering effects and polarization induced field. Simulated results show an improved current voltage (I–V) characteristics as well as high peak to valley current ratio (PVCR).

Keywords

AlGaN/GaN Resonant tunneling diode Scattering Polarization 

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Notes

Acknowledgment

The authors of IIT Kharagpur would like to acknowledge ENS Project, Department of Electronics and Information Technology (DeitY) Government of India for the project funding.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Subhra Chowdhury
    • 1
  • Anirban Santara
    • 2
  • Partha Mukhopadhyay
    • 1
    • 3
  • Dhrubes Biswas
    • 1
    • 2
    • 3
  1. 1.Advanced Technology Development CenterIndian Institute of Technology KharagpurKharagpurIndia
  2. 2.Electronics and Electrical Communication EngineeringIndian Institute of Technology KharagpurKharagpurIndia
  3. 3.Rajendra Mishra School of Engineering EntrepreneurshipIndian Institute of Technology KharagpurKharagpurIndia

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