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Advanced AlGaN/GaN Resonant Tunneling Diode on Silicon Substrate for Negligible Scattering and Polarization effects

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

In this work we have proposed an advanced AlGaN/GaN resonant tunneling diode (RTD) structure on silicon substrate which introduces modulation doped emitter collector regions and graded spacer layers. An analytical model has been presented to predict the variation of transmission coefficient (Tc) with different scattering phenomena. The physical interpretations of this structure define negligible scattering effects and polarization induced field. Simulated results show an improved current voltage (I–V) characteristics as well as high peak to valley current ratio (PVCR).

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References

  1. G.Martin, S. Strite, A. Botchkarev, A. Agrwal, A. Rockett, H. Morkoc, W. R. L. Lambrecht, B.Segall, Appl. Phys. Lett. 65, 610 (1994).

    Article  Google Scholar 

  2. S. Leconte, S. Golka, G. Pozzovivo, G. Strasser, T. Remmele, M. Albrecht, and E. Monroy, Phys. Status Solidi C 5, 431 (2008).

    Google Scholar 

  3. S. Golka, C. Pflugl, W. Schrenk, G. Strasser, C. Skierbiszewski, M.Siekacz, I. Grzegory, and S. Porowski, Appl. Phys. Lett. 88, 172106 (2006).

    Article  Google Scholar 

  4. Akihiko Kikuchi, Ryo Bannai, and Katsumi Kishino, Appl. Phys. Lett. 81, 1729 (2002).

    Article  Google Scholar 

  5. M. Hermann, E. Monroy, A. Helman, B. Baur, M. Albrecht, B. Daudin, O.Ambacher, M. Stutzmann, and M. Eickhoff, Phys. Status Solidi C 1, 2210 (2004).

    Google Scholar 

  6. S. Golka, C. Pflugl, W. Schrenk, G. Strasser, C. Skierbiszewski, M.Siekacz, I. Grzegory, and S. Porowski, Appl. Phys. Lett. 88, 172106 (2006).

    Article  Google Scholar 

  7. S. Leconte, S. Golka, G. Pozzovivo, G. Strasser, T. Remmele, M. Albrecht, and E. Monroy, Phys. Status Solidi C 5, 431 (2008).

    Google Scholar 

  8. Z. Vashaei, C. Bayram, and M. Razeghi, J. Appl. Phys. 107, 083505 (2010).

    Google Scholar 

  9. M. Grundmann, The physics of semiconductors, 2nd edition, (Springer, Leipzig, 2010).

    Google Scholar 

  10. B.G. Streetman and S.Banerjee, Solid State Electronic Devices, 2nd edition, (Prentice Hall, India, 1986).

    Google Scholar 

  11. Y. Fu, Q. Chen, M. Willander, H. Brugger and U. Meiners, J. Appl. Phys. 74, 1874 (1993).

    Google Scholar 

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Acknowledgment

The authors of IIT Kharagpur would like to acknowledge ENS Project, Department of Electronics and Information Technology (DeitY) Government of India for the project funding.

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Authors and Affiliations

  1. Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, 72130, West Bengal, India

    Subhra Chowdhury, Partha Mukhopadhyay & Dhrubes Biswas

  2. Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, West Bengal, India

    Anirban Santara & Dhrubes Biswas

  3. Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology Kharagpur, Kharagpur, 721302, West Bengal, India

    Partha Mukhopadhyay & Dhrubes Biswas

Authors
  1. Subhra Chowdhury
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  2. Anirban Santara
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  3. Partha Mukhopadhyay
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  4. Dhrubes Biswas
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Corresponding author

Correspondence to Subhra Chowdhury .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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Chowdhury, S., Santara, A., Mukhopadhyay, P., Biswas, D. (2014). Advanced AlGaN/GaN Resonant Tunneling Diode on Silicon Substrate for Negligible Scattering and Polarization effects. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_72

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