Abstract
We propose a hybrid light-emitting diode (LED) design comprising of p-GaN/ p-MgZnO/ InGaN/ n-MgZnO/ n-ZnO emanating green electroluminescence centered around 560 nm. We compare the performance of proposed LED with ZnO and GaN based green LEDs through 2-D numerical simulation. It is found that hybrid LED shows highest IQE of 93.2 % with added advantage of least efficiency droop at high injection current.
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Verma, S., Mukherjee, S. (2014). Investigation on Hybrid Green Light-Emitting Diode. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_71
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DOI: https://doi.org/10.1007/978-3-319-03002-9_71
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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