Investigation on Hybrid Green Light-Emitting Diode
We propose a hybrid light-emitting diode (LED) design comprising of p-GaN/ p-MgZnO/ InGaN/ n-MgZnO/ n-ZnO emanating green electroluminescence centered around 560 nm. We compare the performance of proposed LED with ZnO and GaN based green LEDs through 2-D numerical simulation. It is found that hybrid LED shows highest IQE of 93.2 % with added advantage of least efficiency droop at high injection current.
KeywordsEfficiency droop GaN Internal quantum efficiency ZnO
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- 2.R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern, M. G. Spencer, Y. X. Li, L. G. Salamanca-Riba, A. A. Illiadis. K. A. Jones, “Heteroepitaxy of ZnO and GaN and its implications for fabrication of hybrid optoelectronic devices”, Appl. Phys. Lett., Vol. 73, No. 348, 1998.CrossRefGoogle Scholar
- 4.Y. H. Cho, S. K. Lee, H. S. Kwack, J. Y. Kim, K. S. Lim, H. M. Kim, T. W. Kang, S. N. Lee, M. S. Seon, O. H. Nam, and Y. J. Park, “Carrier loss and luminescence degradation in green light emitting InGaN quantum wells with micron-scale indium clusters”, Appl. Phys. Lett., Vol. 83, No. 2578, 2003.CrossRefGoogle Scholar
- 6.ATLAS User’s Manual: Device Simulation Software. Santa Clara, CA: SILVACO International, 2009.Google Scholar