Microwave Characteristics of SiC IMPATT Diodes at 220 GHz
The microwave characteristics of SiC IMPATT diodes at 220 GHz are simulated in this paper. In our simulation study, we have considered both the SDR and DDR structures of IMPATT diode based on 4H-SiC and 6H-SiC materials. The simulation of these diodes reveals that 4H-SiC is a promising material for IMPATT applications based on DDR structure with a minimum noise measure as compare to 6H-SiC semiconductor. It is also interesting to note that n-type 4H-SiC SDR IMPATT diode outperforms the other SDR IMPATT diodes in terms of noise measure.
KeywordsIMPATT Microwave and SiC
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