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A New Superjunction Power MOSFET with Oxide-Pillar-in-Drift Region

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

In this paper, we propose a new SJMOSFET with oxide pillar in its drift region that shows an improvement in its breakdown performance and relation between the Bv and Ron become more linear as compared to the conventional SJMOSFET due to a reduction in the vertical electric field. Simulations has been done using PISCES-II device simulator. The effect of oxide pillar width has also been done and analyzed.

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Author information

Authors and Affiliations

  1. Department of Physics and Electronics, University of Jammu, Jammu and Kashmir, India

    Deepti Sharma & Rakesh Vaid

Authors
  1. Deepti Sharma
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  2. Rakesh Vaid
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Corresponding author

Correspondence to Rakesh Vaid .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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Sharma, D., Vaid, R. (2014). A New Superjunction Power MOSFET with Oxide-Pillar-in-Drift Region. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_63

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