Large Signal Physical Operation of a III–V Nitride Based Double Velocity Transit Time Device: A Potential Source For THz Imaging
Performance of GaN/AlGaN based Double Velocity Avalanche Transit Time device is proposed in this paper, for the first time, for useful application in THz-imaging. The device is designed and analyzed by developing a generalized non-linear large-signal simulator that includes effects of elevated temperature, phonon-bottle-necking, scattering limited mobility-velocity and parasitic resistance. The simulation reveals that the proposed device is capable of generating a considerable pulsed power ~8 × 1010 W/m2 with an efficiency of 8 % at 1.4 THz under 50 % large signal modulation. Dc characterization of the fabricated diodes is in agreement with simulation results.
KeywordsGaN/AlGaN IMPATT Large-signal modeling THz-imaging Double velocity IMPATT Voltage modulation Admittance properties Power-frequency analysis Elevated temperature model Phonon-bottle-necking Fabrication of GaN/AlGaN THz diode
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The author is thankful to Director CMSDS—DRDO, Kolkata, for his keen interest in the work. The author gratefully acknowledges the microelectronics research group of TU-Darmstadt, Germany headed by Prof. H. Hartnagel for their all valuable technical & experimental support to fabricate the device.