Advertisement

Large Signal Physical Operation of a III–V Nitride Based Double Velocity Transit Time Device: A Potential Source For THz Imaging

  • Moumita Mukherjee
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Performance of GaN/AlGaN based Double Velocity Avalanche Transit Time device is proposed in this paper, for the first time, for useful application in THz-imaging. The device is designed and analyzed by developing a generalized non-linear large-signal simulator that includes effects of elevated temperature, phonon-bottle-necking, scattering limited mobility-velocity and parasitic resistance. The simulation reveals that the proposed device is capable of generating a considerable pulsed power ~8 × 1010 W/m2 with an efficiency of 8 % at 1.4 THz under 50 % large signal modulation. Dc characterization of the fabricated diodes is in agreement with simulation results.

Keywords

GaN/AlGaN IMPATT Large-signal modeling THz-imaging Double velocity IMPATT Voltage modulation Admittance properties Power-frequency analysis Elevated temperature model Phonon-bottle-necking Fabrication of GaN/AlGaN THz diode 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Notes

Acknowledgments

The author is thankful to Director CMSDS—DRDO, Kolkata, for his keen interest in the work. The author gratefully acknowledges the microelectronics research group of TU-Darmstadt, Germany headed by Prof. H. Hartnagel for their all valuable technical & experimental support to fabricate the device.

References

  1. 1.
    S.C.Binari, “GaN electronic devices for future systems” MTT-S Conf. 1999, pp-1081-1084 (1999).Google Scholar
  2. 2.
    Electronic Archive: New Semiconductor Materials, Characteristics and Properties (Online) www.ioffe.ru/SVA/NSM/Semicond/GaN.
  3. 3.
    K. Kunihiro, K. Kasahara, Y. Takahashi and Y. Ohno,“Experimental evaluation of impact ionization coefficients in GaN”, IEEE Electron Device Lett, vol 20, pp. 608-610, December (1999).CrossRefGoogle Scholar
  4. 4.
    M. Mukherjee, “High-Power Hexagonal SiC Device: A Large-Signal High-Frequency Analysis”, Physics and Technology of Silicon Carbide, INTECH, ISBN 978-953-51-0917-4, DOI:  10.5772/52982, Chapter 14, p. 337, (2012).CrossRefGoogle Scholar
  5. 5.
    C. F. Chu, C.C. Yu, Y.K. Wang, J.Y. Tsai, F.I. Lai and S.C. Wang, “Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization”, Appl. Phys. Lett. vol. 77, pp. 3423-3425, 2000.CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Centre for Millimeter-wave Semiconductor Devices and Systems (CMSDS—DRDO)University of CalcuttaKolkataIndia
  2. 2.Ministry of DefenceGovernment of IndiaKolkataIndia

Personalised recommendations