An Analytical Study of Ion Implanted Strained-Si on SOI MOSFETs for Optimizing Switching Characteristics

  • Gopal Rawat
  • Mirgender Kumar
  • Sarvesh Dubey
  • S. Jit
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

In this paper, surface potential based analytical model of subthreshold swing of ion implanted strained-Si-on-Insulator (SSOI) MOSFETs have been presented. A comprehensive evaluation is presented to optimize the switching characteristics for this MOS structure. The modeling results are validated by comparing with the simulation data obtained by the two dimensional (2D) device simulator ATLAS™.

Keywords

SSOI MOSFETs Subthreshold swing and Strained technology 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Gopal Rawat
    • 1
  • Mirgender Kumar
    • 1
  • Sarvesh Dubey
    • 2
  • S. Jit
    • 1
  1. 1.Department of Electronics EngineeringIndian Institute of Technology (BHU)VaranasiIndia
  2. 2.Department of Electronics and Communication EngineeringShri Ramswaroop Memorial UniversityLucknowIndia

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