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Stress-induced Degradation and Defect Studies in Strained-Si/SiGe MOSFETs

  • Chhandak Mukherjee
  • C. K. Maiti
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Effect of threading dislocations contributing to the increased 1/f noise in strained-Si MOSFETs is studied. Results of low-frequency noise study of strain-engineered MOSFETs are presented including 1/f and random telegraph noise (RTN). From the bias dependency of 1/f noise the correlated mobility fluctuation model (in NMOSFETs) is identified as the dominant noise mechanism. The low-frequency noise study reveals electrical stress-induced device degradation shown by the increased 1/f noise and complex RTN indicating reliability issues. A detailed low-frequency noise study in highly-scaled, strained MOS devices is presented indicating the capabilities of LF noise study for assessing device quality and lifetime essential in reliability analysis.

Keywords Flicker noise Random telegraph noise Threading dslocations Traps  Strained-Si MOSFETs 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Dept. of Electronics and ECEIndian Institute of TechnologyKharagpurIndia

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