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A Quantum Analytical Model for Inversion Current in Short Channel DMDG SON MOSFET

  • Gargee Bhattacharyya
  • Sharmistha Shee
  • Pranab Kishore Dutta
  • Subir Kumar Sarkar
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

DMDG MOSFET, a promising alternative to conventional CMOS devices, has evolved from extensive research in the present era. In our present work we have incorporated quantum mechanical effects on DMDG SON MOSFET because these effects became significant factors in deca-nanometer scale. Here, we have studied the current voltage characteristics of DMDG SON MOSFET incorporating the quantum mechanical effects. For maximum charge inversion in the channel, minimum value of surface potential is considered to calculate charge and corresponding current along the channel.

Keywords

Dual material double gate (DMDG) Drain current Quantization Minimum surface potential Silicon on nothing (SON) 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Gargee Bhattacharyya
    • 1
  • Sharmistha Shee
    • 1
  • Pranab Kishore Dutta
    • 1
  • Subir Kumar Sarkar
    • 1
  1. 1.Jadavpur UniversityKolkataIndia

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