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Analytical Expression of Barrier Layer for Enhancement Mode AlGaN/GaN HEMT

  • Apurba Chakraborty
  • Saptarshi Ghosh
  • Ankush Bag
  • Palash Das
  • Dhrubes Biswas
Part of the Environmental Science and Engineering book series (ESE)

Abstract

In this paper, we have investigated analytically the required thickness of barrier layer for the enhancement mode of AlGaN/GaN high electron mobility transistor (HEMT). A mathematical expression is derived for barrier layer of AlGaN/GaN high electron mobility transistor (HEMT) so that the device can work in enhancement mode. This critical value of barrier layer is fixed for a particular Al composition, gate barrier height and relaxation factor. The device will work in enhancement mode if the barrier layer thickness is below the critical value. This critical value of barrier layer is a function of polarization charge. It is seen from derived result that critical value of barrier layer increases if the polarized charge is reduced. Threshold voltage is calculated to show the dependence of critical barrier layer thickness and the gate barrier height.

Keywords

HEMT 2DEG Threshold voltage 

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References

  1. 1.
    J. Moon, D. Wong, T. Hussain, M. Micovic, P. Deelman, H. Ming, M. Antcliffe, C. Ngo, P. Hashimoto, and L. McCray, “Submicron enhancement-Mode AlGaN/GaN HEMTs,” Device Research Conf.Dig., pp. 23-24, 2002.Google Scholar
  2. 2.
    S. Vitanov and V. Palankovski, “Normally-Off AlGaN/GaN HEMTs with InGaN Cap Layer: A Simulation Study,” Solid-State Electron, vol. 52,no. 11,pp. 1791-1795,2008.CrossRefGoogle Scholar
  3. 3.
    O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann,W. Rieger, and J. Hilsenbeck, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Gaface AlGaN/GaN heterostructures,” J. Appl. Phys., vol. 85, no. 6, pp. 3222–3233, Mar. 1999.CrossRefGoogle Scholar
  4. 4.
    M. Asif Khan, Q. Chen, C. J. Sun, J. W. Yang, “Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors,” Appl. Phys. Lett. 68, 514, (1996).CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Apurba Chakraborty
    • 1
  • Saptarshi Ghosh
    • 1
  • Ankush Bag
    • 1
  • Palash Das
    • 1
  • Dhrubes Biswas
    • 1
  1. 1.IIT KharagpurKharagpurIndia

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