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Ambipolar Behaviour of Tunnel Field Effect Transistor (TFET) as an Advantage for Biosensing Applications

  • Ajay Singh
  • Rakhi Narang
  • Manoj Saxena
  • Mridula Gupta
Part of the Environmental Science and Engineering book series (ESE)

Abstract

In this work, an analytical model for a dielectric modulated (DM) double gate (DG) Tunnel Field Effect Transistor (TFET) working as a biosensor for label free electrical detection of biomolecules has been proposed. It has been analyzed that the ambipolar behaviour of tunnel field effect transistor can also be used for sensing of the biomolecules when the negative voltage is applied to n-TFET. In this paper, the ON current (for both negative and positive gate voltage) of the TFET has been used as the sensing parameter. The characteristics trends are verified via ATLAS (SILVACO) device simulation results.

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Notes

Acknowledgments

Authors would like to thankful to the Ministry of Science and Technology, Department of Science and Technology (DST), Government of India and University of Delhi for the financial support.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Ajay Singh
    • 1
  • Rakhi Narang
    • 1
  • Manoj Saxena
    • 2
  • Mridula Gupta
    • 1
  1. 1.Department of Electronic Science, Semiconductor Device Research LaboratoryUniversity of Delhi South CampusNew DelhiIndia
  2. 2.Department of Electronics, Deen Dayal Upadhyaya CollegeUniversity of DelhiNew DelhiIndia

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