Ambipolar Behaviour of Tunnel Field Effect Transistor (TFET) as an Advantage for Biosensing Applications
In this work, an analytical model for a dielectric modulated (DM) double gate (DG) Tunnel Field Effect Transistor (TFET) working as a biosensor for label free electrical detection of biomolecules has been proposed. It has been analyzed that the ambipolar behaviour of tunnel field effect transistor can also be used for sensing of the biomolecules when the negative voltage is applied to n-TFET. In this paper, the ON current (for both negative and positive gate voltage) of the TFET has been used as the sensing parameter. The characteristics trends are verified via ATLAS (SILVACO) device simulation results.
Unable to display preview. Download preview PDF.
Authors would like to thankful to the Ministry of Science and Technology, Department of Science and Technology (DST), Government of India and University of Delhi for the financial support.
- 7.SILVACO, Santa Clara, CA, Atlas, Two Dimensional Device Simulation Program, 2010.Google Scholar