A Method to Characterize Microstrip Lines for Design of MMICs up to 40 GHz
This paper presents the characterization method for microstrip lines of different characteristic impedance used for design of Microwave Monolithic Integrated Circuits (MMIC) up to 40 GHz. This characterization method is based on extracting the T-matrix of coplanar waveguide-to-microstrip (CPW-M) transitions the S-parameters of two microstrip lines of different lengths, each of which includes CPW-M transitions on either-side. The T-matrix of CPW-M is then subtracted from the S-parameters of microstrip line with CPW_M transitions to obtain the S-parameters of only the microstrip line without CPW-M. To validate the proposed method the extracted S-parameter matrix of microstrip lines have been compared with the electromagnetic simulation results of microstrip lines without CPW-M transition. This exercise has been carried out on GaAs (Gallium Arsenide) of 100 um thickness, but the method is applicable to other substrates as well.
KeywordsCoplanar waveguide-to-microstrip transition Electromagnetic simulation De-embedding Monolithic microwave integration circuits Momentum
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The authors would like to acknowledge Dr. R. Murlidharan, Director, Solid state Physics laboratory Delhi, for his encouragement to carry out this work and his kind permission for publication of this work.
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