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Gate Leakage Current Suppression in AlGaN/GaN HEMT by RTP Annealing

  • Somna S. Mahajan
  • Anushree Tomar
  • Robert Laishram
  • Sonalee Kapoor
  • Amit Mailk
  • AA Naik
  • Seema Vinayak
  • BK Sehgal
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Ni/Au Schottky contacts to AlGaN/GaN HEMT were formed by E-beam evaporation technique and lift-off process. The contacts were Rapid thermal annealed at 300 °C for duration of 2–10 min. A significant suppression in gate leakage current was observed at 2 and 4 min annealing. At further higher annealing duration deterioration in the reverse gate characteristics was observed.

Keywords

Ni/Au schottky contact Reverse leakage current SIMS 

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Notes

Acknowledgments

Authors extend thanks to Mr. Brajesh Yadav and Mr. S. K. Sharma for carrying out SIMS depth profiling. The authors are grateful to Dr. R. Muralidharan, Director, SSPL, Delhi for his guidance and permission to publish this work.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Somna S. Mahajan
    • 1
  • Anushree Tomar
    • 1
  • Robert Laishram
    • 1
  • Sonalee Kapoor
    • 1
  • Amit Mailk
    • 1
  • AA Naik
    • 1
  • Seema Vinayak
    • 1
  • BK Sehgal
    • 1
  1. 1.Solid State Physics LaboratoryTimarpurIndia

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