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Passivation of AlGaN/GaN HEMT by Silicon Nitride

  • S. Dayal
  • Sunil Kumar
  • Sudhir Kumar
  • H. Arora
  • R. Laishram
  • R. K. Chaubey
  • B. K. Sehgal
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

We report here the passivation of AlGaN/GaN HEMT devices with silicon nitride films deposited by inductively coupled plasma chemical vapour deposition (ICPCVD). With low power ammonia plasma pretreatment and silicon nitride film passivation having refractive index of 2.01 and 2,000 A0 thickness, 80–95 % current recovery and minimum knee walkout have been achieved on different samples.

Keywords

GaN HEMT Silicon nitride NH3 plasma pretreatment Passivation 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • S. Dayal
    • 1
  • Sunil Kumar
    • 1
  • Sudhir Kumar
    • 1
  • H. Arora
    • 1
  • R. Laishram
    • 1
  • R. K. Chaubey
    • 1
  • B. K. Sehgal
    • 1
  1. 1.Solid State Physics LaboratoryDelhiIndia

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