Abstract
We report here the passivation of AlGaN/GaN HEMT devices with silicon nitride films deposited by inductively coupled plasma chemical vapour deposition (ICPCVD). With low power ammonia plasma pretreatment and silicon nitride film passivation having refractive index of 2.01 and 2,000 A0 thickness, 80–95 % current recovery and minimum knee walkout have been achieved on different samples.
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Dayal, S. et al. (2014). Passivation of AlGaN/GaN HEMT by Silicon Nitride. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_36
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DOI: https://doi.org/10.1007/978-3-319-03002-9_36
Publisher Name: Springer, Cham
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Online ISBN: 978-3-319-03002-9
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