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Development of GaAs Hyperabrupt Schottky Varactor Diode using Ion-Implanted Active Layer on SI GaAs

  • S. Dayal
  • S. Mahajan
  • D. S. Rawal
  • B. K Sehgal
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

We report here the fabrication of ion implanted GaAs hyperabrupt varactor diode that can be integrated in MMIC process. Varactor diodes with constant sensitivity γ of 0.55–0.65 with Cmax/Cmin varying from 2.5 to 3.5 have been fabricated. Varactors diode geometries with different anode lengths, anode width, single and multiple finger anodes with device area varying from 50 to 6,000 μm2 were fabricated. The breakdown voltage of >10 V have been obtained for all the different value capacitors ranging from 0.16 to 11.2 pF.

Keywords

Hyperabrupt Schottky varactor diode Ion implanted active layer 

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Notes

Acknowledgments

The authors wish to thank Director, Solid State Physics Laboratory for his kind permission to publish this paper. They also would also like to thank the whole GaAs Fabline team for their support and encouragement.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • S. Dayal
    • 1
  • S. Mahajan
    • 1
  • D. S. Rawal
    • 1
  • B. K Sehgal
    • 1
  1. 1.Solid state Physics LaboratoryDelhiIndia

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