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Development of GaAs Hyperabrupt Schottky Varactor Diode using Ion-Implanted Active Layer on SI GaAs

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

We report here the fabrication of ion implanted GaAs hyperabrupt varactor diode that can be integrated in MMIC process. Varactor diodes with constant sensitivity γ of 0.55–0.65 with Cmax/Cmin varying from 2.5 to 3.5 have been fabricated. Varactors diode geometries with different anode lengths, anode width, single and multiple finger anodes with device area varying from 50 to 6,000 μm2 were fabricated. The breakdown voltage of >10 V have been obtained for all the different value capacitors ranging from 0.16 to 11.2 pF.

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Acknowledgments

The authors wish to thank Director, Solid State Physics Laboratory for his kind permission to publish this paper. They also would also like to thank the whole GaAs Fabline team for their support and encouragement.

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Authors and Affiliations

  1. Solid state Physics Laboratory, Lucknow road, Delhi, 110054, India

    S. Dayal, S. Mahajan, D. S. Rawal & B. K Sehgal

Authors
  1. S. Dayal
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  2. S. Mahajan
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  3. D. S. Rawal
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  4. B. K Sehgal
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Corresponding author

Correspondence to S. Dayal .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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Dayal, S., Mahajan, S., Rawal, D.S., K Sehgal, B. (2014). Development of GaAs Hyperabrupt Schottky Varactor Diode using Ion-Implanted Active Layer on SI GaAs. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_35

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