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Effect of Ni Ions Irradiation on GaAs pHEMT Materials and Devices

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

GaAs/AlGaAs heterostructure based pHEMT material and fabricated pHEMT devices characteristics were studied with Ni ions irradiation at different fluences. The structural, electrical and optical characteristics were compared before and after irradiation. The structural property of the material was found unchanged while optical and electrical deterioration was observed for used fluences.

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Author information

Authors and Affiliations

  1. Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi, India

    Rupesh K. Chaubey, Akhilesh Pandey, A. A. Naik, Seema Vinayak & B. K. Sehgal

  2. Department of Physics, Banaras Hindu University, Varanasi, India

    P. C. Srivastava

Authors
  1. Rupesh K. Chaubey
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  2. Akhilesh Pandey
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  3. A. A. Naik
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  4. Seema Vinayak
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  5. B. K. Sehgal
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  6. P. C. Srivastava
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Corresponding author

Correspondence to Rupesh K. Chaubey .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Chaubey, R.K., Pandey, A., Naik, A.A., Vinayak, S., Sehgal, B.K., Srivastava, P.C. (2014). Effect of Ni Ions Irradiation on GaAs pHEMT Materials and Devices. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_30

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