Effect of Ni Ions Irradiation on GaAs pHEMT Materials and Devices

  • Rupesh K. Chaubey
  • Akhilesh Pandey
  • A. A. Naik
  • Seema Vinayak
  • B. K. Sehgal
  • P. C. Srivastava
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

GaAs/AlGaAs heterostructure based pHEMT material and fabricated pHEMT devices characteristics were studied with Ni ions irradiation at different fluences. The structural, electrical and optical characteristics were compared before and after irradiation. The structural property of the material was found unchanged while optical and electrical deterioration was observed for used fluences.

Keywords

pHEMT Radiation reliability 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Rupesh K. Chaubey
    • 1
  • Akhilesh Pandey
    • 1
  • A. A. Naik
    • 1
  • Seema Vinayak
    • 1
  • B. K. Sehgal
    • 1
  • P. C. Srivastava
    • 2
  1. 1.Solid State Physics LaboratoryDelhiIndia
  2. 2.Department of PhysicsBanaras Hindu UniversityVaranasiIndia

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