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Capacitance-Voltage Measurement of SiO2/GeOxNy Gate Stack on Surface Passivated Germanium

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

Germanium (Ge) based MOS transistors is possible alternative to silicon based MOS transistors due to high mobility of carriers in Ge. Extensive research is going on for fabrication of high mobility MOS devices worldwide. Here, we have studied the c-v characteristics of Ge based surface passivated MOS structure such as dielectric constant of gate stack, effective oxide charges, density of interface charges at semiconductor oxide interface etc. The interface trap density extracted from the C-V/G-V measurement showed the lowest interface trap density of 7.82 × 1011 cm2 eV−1. The minimum leakage current density for SiO2/GexONy gate dielectric stack is 1.35 × 10−7 A cm−2 at gate bias of 1 V.

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Acknowledgments

Authors are thankful to CEN, IITB for providing necessary fabrication and characterization facilities under INUP scheme. One of the authors, A. G. Khairnar is thankful to CSIR New Delhi, India for providing Senior Research Fellowship for carrying out this work [File No. 09/728(0029)/2012-EMR-I].

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Authors and Affiliations

  1. Department of Electronics, School of Physical Sciences, North Maharashtra University, Jalgaon, 425001, Maharashtra, India

    Anil G. Khairnar, Vilas S. Patil & Ashok M. Mahajan

Authors
  1. Anil G. Khairnar
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  2. Vilas S. Patil
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  3. Ashok M. Mahajan
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Corresponding authors

Correspondence to Anil G. Khairnar or Ashok M. Mahajan .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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Khairnar, A.G., Patil, V.S., Mahajan, A.M. (2014). Capacitance-Voltage Measurement of SiO2/GeOxNy Gate Stack on Surface Passivated Germanium. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_3

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