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Physics of Semiconductor Devices pp 119–120Cite as

Structural Optical and Electrical Studies of AlGaN/GaN Hetrostructures with AlN Interlayer Grown on Sapphire Substrate by MOCVD

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Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

In the present study of AlGaN/GaN heterostructures with high quality AlN interlayer (AlN-IL) were grown by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrate. The AlN inter-layer thickness was varied as 1, 2 and 3 nm. The High-resolution X-ray diffraction (HRXRD) FWHM for (002) plane of GaN was measured for AlGaN/GaN with different AlN-IL thickness. The surface roughness was measured using Atomic Force Microscope (AFM). The Photoluminescence (PL) band edge emission, the room temperature and low temperature hall measurement show the enhancement of two-dimensional electron gas (2DEGs) sheet carrier density due to AlN-IL. The results have been discussed in detail.

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Authors and Affiliations

  1. Crystal Growth Centre, Anna University, Chennai, 600 025, Tamil Nadu, India

    Raju Ramesh, Ponnusamy Arivazhagan, Mathiyan Jayasakthi, Ravi Loganthan, Kandhasamy Prabakaran, Boopathi Kuppuligam, Manavimaran Balaji & Krishnan Baskar

Authors
  1. Raju Ramesh
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  2. Ponnusamy Arivazhagan
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  3. Mathiyan Jayasakthi
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  4. Ravi Loganthan
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  5. Kandhasamy Prabakaran
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  6. Boopathi Kuppuligam
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  7. Manavimaran Balaji
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  8. Krishnan Baskar
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Corresponding author

Correspondence to Krishnan Baskar .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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Ramesh, R. et al. (2014). Structural Optical and Electrical Studies of AlGaN/GaN Hetrostructures with AlN Interlayer Grown on Sapphire Substrate by MOCVD. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_29

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