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Growth and Characterization of AlInGaN/AlN/GaN Grown by MOCVD

  • Ravi Loganathan
  • Mathaiyan Jayasakthi
  • Kandhasamy Prabakaran
  • Raju Ramesh
  • Ponnusamy Arivazhagan
  • Boopathi kuppulingam
  • Subramanian Sankaranarayanan
  • Manavaimaran Balaji
  • Shubra Singh
  • Krishnan Baskar
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

AlxInyGa1-x-yN epilayers have been grown by metal organic chemical vapor deposition (MOCVD) at different temperatures from 740 to 940 °C. The incorporation of indium increases with decreasing growth temperature, while the incorporation of Al composition was 30–40 %. The optical properties of the samples have been investigated by photoluminescence (PL). The results show that the sample grown at 890 °C exhibits the best crystalline and optical quality.

Keywords

GaN Wet etching Dislocation density and HXRD 

Notes

Acknowledgements

The authors acknowledge Department of Science and Technology (DST). One of the authors (R. Loganathan) would like to thank Anna University, Chennai, for Anna Centenary Research Fellowship.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Ravi Loganathan
    • 1
  • Mathaiyan Jayasakthi
    • 1
  • Kandhasamy Prabakaran
    • 1
  • Raju Ramesh
    • 1
  • Ponnusamy Arivazhagan
    • 1
  • Boopathi kuppulingam
    • 1
  • Subramanian Sankaranarayanan
    • 1
  • Manavaimaran Balaji
    • 1
  • Shubra Singh
    • 1
  • Krishnan Baskar
    • 1
  1. 1.Crystal Growth CentreAnna UniversityChennaiIndia

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