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A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT

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Book cover Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

The degradation in the electrical characteristics of advanced 200 GHz SiGe HBTs were studied by mixed mode electrical stress up to 10,000 s. The degradation in the electrical characteristics of SiGe HBTs was also studied by exposing the SiGe HBTs to 50 MeV lithium [Li3+] ions. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak hFE of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and irradiation time.

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Author information

Authors and Affiliations

  1. Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, 570006, Karnataka, India

    K. C. Praveen, M. N. Bharathi & A. P. Gnana Prakash

  2. Department of PG Studies in Physics, JSS College, Ooty Road, Mysore, 570025, Karnataka, India

    N. Pushpa

  3. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA

    John D. Cressler

Authors
  1. K. C. Praveen
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  2. N. Pushpa
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  3. M. N. Bharathi
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  4. John D. Cressler
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  5. A. P. Gnana Prakash
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Corresponding author

Correspondence to A. P. Gnana Prakash .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Praveen, K.C., Pushpa, N., Bharathi, M.N., Cressler, J.D., Gnana Prakash, A.P. (2014). A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_27

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