Abstract
Performance of GaN based Double Drift Avalanche Transit Time device is proposed in this paper, for the first time, for useful application in THz-imaging. The device is designed and analyzed by developing a generalized non-linear large-signal simulator that includes effects of elevated temperature, phonon-bottle-necking, scattering limited mobility-velocity and parasitic resistance. The study reveals that the proposed device is capable of generating a pulsed power ~ 0.4 W with an efficiency of 8 % at 1.4 THz under 50 % large signal modulation.
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Mukherjee, M., Bose, D.N. (2014). Large-Signal Analysis of III-V Nitride Based DD-Transit Time Device: A New Source for THz Power Generation. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_26
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DOI: https://doi.org/10.1007/978-3-319-03002-9_26
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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