Low Voltage Pentacene Organic Field Effect Transistors with High-K Gate Dielectric
In organic transistors, generally SiO2 is used as the gate insulator for their high quality and commercial availability despite its relatively low dielectric constant (~ 3.9) which is responsible for high operating voltage of organic transistors. We have fabricated low operating voltage pentacene based organic field effect transistors (OFETs) with high-k STO gate dielectric. The operating voltage of OFETs is reduced by a factor of ten with STO gate dielectric. Pentacene OFETs show operating voltage < 5 V, high charge carrier mobility (1.3 cm2/Vs) and high on–off ratio (106).
KeywordsOFET High-k STO and low operating voltage