Abstract
In organic transistors, generally SiO2 is used as the gate insulator for their high quality and commercial availability despite its relatively low dielectric constant (~ 3.9) which is responsible for high operating voltage of organic transistors. We have fabricated low operating voltage pentacene based organic field effect transistors (OFETs) with high-k STO gate dielectric. The operating voltage of OFETs is reduced by a factor of ten with STO gate dielectric. Pentacene OFETs show operating voltage < 5 V, high charge carrier mobility (1.3 cm2/Vs) and high on–off ratio (106).
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Yadav, S., Ghosh, S. (2014). Low Voltage Pentacene Organic Field Effect Transistors with High-K Gate Dielectric. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_233
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DOI: https://doi.org/10.1007/978-3-319-03002-9_233
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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