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Low Voltage Pentacene Organic Field Effect Transistors with High-K Gate Dielectric

  • Sarita Yadav
  • Subhasis Ghosh
Part of the Environmental Science and Engineering book series (ESE)

Abstract

In organic transistors, generally SiO2 is used as the gate insulator for their high quality and commercial availability despite its relatively low dielectric constant (~ 3.9) which is responsible for high operating voltage of organic transistors. We have fabricated low operating voltage pentacene based organic field effect transistors (OFETs) with high-k STO gate dielectric. The operating voltage of OFETs is reduced by a factor of ten with STO gate dielectric. Pentacene OFETs show operating voltage < 5 V, high charge carrier mobility (1.3 cm2/Vs) and high on–off ratio (106).

Keywords

OFET High-k STO and low operating voltage 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.School of Physical SciencesJawaharlal Nehru UniversityNew DelhiIndia

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