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Effect of Junction Temperature on the Microwave Properties of IMPATT Diodes

  • J. Pradhan
  • S. R. Pattanaik
  • S. K. Swain
  • G. N. Dash
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

The microwave characteristics, with respect to two different operating junction temperatures, are simulated for the IMPATT diodes based on Si, GaAs and 4H-SiC semiconductor material. With the rise in junction temperature, a general trend of decrease in device efficiency and increase in device negative conductance are observed for all the diodes under consideration. It is also interesting to note that noise measure reduces significantly with rise in junction temperature.

Keywords

IMPATT Microwave Junction temperature 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • J. Pradhan
    • 1
  • S. R. Pattanaik
    • 2
  • S. K. Swain
    • 1
  • G. N. Dash
    • 1
  1. 1.School of PhysicsSambalpur UniversitySambalpurIndia
  2. 2.Apex Institute of Technology and ManagementBhubaneswarIndia

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