Growth and Characterization of Screen-Printed Zinc Sulpho Selenide Composite Thin Layer for Solar Cell Buffer Layer Application
Zinc sulpho selenide has been proposed as a novel buffer layer, alternative to CdS for solar cell applications. In this paper Zn-Se-S composite thin layers have been synthesized on ultra clean glass substrate by screen-printing method followed by sintering process. Zinc sulphide, zinc selenide and zinc chloride have been used as the basic source material. To deposit good quality films, optimum conditions have been determined. X-ray diffraction analysis exhibited polycrystalline nature of layers with strong preferential orientation of grains along (200) direction. These layers have the wurtzite crystal structure. The optical band gap (Eg) of the films has been studied by using reflection spectra in wavelength range 325–600 nm. The optical band gap of Zn-Se-S composite thin layer has been found to be in between individual band-gaps of ZnS and ZnSe. The DC electrical conductivity of the layers has been measured in vacuum by a two probe technique and was found to be of the order of 10−6 ohm−1cm−1. These properties make these layers suitable for application as a buffer layer in solar cells.
KeywordsSintering Semiconductors Thin films X-ray diffraction Reflection spectra Band gap
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The Authors are grateful to Dr. Narendra Kumar (Director KIET, Gzb.) and Prof. C.M. Batra (Head, Deptt of AS& H, KIET, Gzb) for constant support and encouragement during this work.
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