Modeling Current Voltage Characteristics of MWIR HgCdTe Diodes at High Reverse Bias Voltage

  • Vanya Srivastav
  • Navneet Kaur Saini
  • L. Sareen
  • R. K. Bhan
  • R. K. Sharma
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

In this paper we model the current voltage (I–V) characteristics of Hg1 − xCdxTe (x = 0.3) diodes at high reverse bias voltage. The breakdown characteristics are indicative of n+/n/p kind of doping profile. Various current limiting mechanisms affecting the soft breakdown characteristics of Hg1 − xCdxTe diodes have been identified. We also found that the existing models do not accurately fit the I–V curves above a certain reverse bias voltage, which led us to investigate possible additional dark current mechanisms responsible for this kind of behavior. Thus, a new current limiting model is also proposed in this paper.

Keywords

Hg1 − xCdxTe Tunneling Soft breakdown 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Vanya Srivastav
    • 1
  • Navneet Kaur Saini
    • 1
  • L. Sareen
    • 1
  • R. K. Bhan
    • 1
  • R. K. Sharma
    • 1
  1. 1.Solid State Physics LaboratoryDelhiIndia

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