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Characterization of InP1-xBix Alloy Grown by Liquid Phase Epitaxy

  • T. D. Das
Part of the Environmental Science and Engineering book series (ESE)

Abstract

I have investigated the effect of Bi incorporation on InPBi layers grown by liquid phase epitaxial technique. High resolution x-ray diffraction (HRXRD) patterns show high crystalline quality and secondary ion mass spectroscopy (SIMS) technique is used to get the amount of Bi incorporated into the layer ~1.25 %. 10 K Photoluminescence is clearly resolved that maximum band gap reduction of 20 meV.

Keywords

SIMS Dilute bismide and photoluminescence 

Notes

Acknowledgments

The author would like to acknowledge Prof. S. Dhar, University of Calcutta for encouragement. I thank Dr. Mukul Gupta, UGC-CSR, Indore for SIMS analysis of the samples. This work is financial supported by DST, Govt. of India under Fast Track project (SR/FTP/PS-89/2010).

References

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    S. K. Das, T. D. Das, S. Dhar, M. de la Mare, and A. Krier Infrared Physics & Technology, 55,156–160(2012).CrossRefGoogle Scholar
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    T. S. Kim, S.D. Lester, and B.G. Streetman Journal of Applied Physics, 62, 8979 (1987).CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of Electronic ScienceUniversity of CalcuttaKolkataIndia

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