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Characterization of InP1-xBix Alloy Grown by Liquid Phase Epitaxy

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

I have investigated the effect of Bi incorporation on InPBi layers grown by liquid phase epitaxial technique. High resolution x-ray diffraction (HRXRD) patterns show high crystalline quality and secondary ion mass spectroscopy (SIMS) technique is used to get the amount of Bi incorporated into the layer ~1.25 %. 10 K Photoluminescence is clearly resolved that maximum band gap reduction of 20 meV.

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References

  1. S. C. Das, T. D. Das, and S. Dhar Infrared Physics & Technology, 55,303 (2012).

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Acknowledgments

The author would like to acknowledge Prof. S. Dhar, University of Calcutta for encouragement. I thank Dr. Mukul Gupta, UGC-CSR, Indore for SIMS analysis of the samples. This work is financial supported by DST, Govt. of India under Fast Track project (SR/FTP/PS-89/2010).

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Authors and Affiliations

  1. Department of Electronic Science, University of Calcutta, 92 A. P. C. Road, Kolkata, 700009, India

    T. D. Das

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  1. T. D. Das
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Correspondence to T. D. Das .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Das, T.D. (2014). Characterization of InP1-xBix Alloy Grown by Liquid Phase Epitaxy. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_226

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