Characterization of InP1-xBix Alloy Grown by Liquid Phase Epitaxy
I have investigated the effect of Bi incorporation on InPBi layers grown by liquid phase epitaxial technique. High resolution x-ray diffraction (HRXRD) patterns show high crystalline quality and secondary ion mass spectroscopy (SIMS) technique is used to get the amount of Bi incorporated into the layer ~1.25 %. 10 K Photoluminescence is clearly resolved that maximum band gap reduction of 20 meV.
KeywordsSIMS Dilute bismide and photoluminescence
The author would like to acknowledge Prof. S. Dhar, University of Calcutta for encouragement. I thank Dr. Mukul Gupta, UGC-CSR, Indore for SIMS analysis of the samples. This work is financial supported by DST, Govt. of India under Fast Track project (SR/FTP/PS-89/2010).