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Physics of Semiconductor Devices pp 877–878Cite as

Hg/Cd Interdiffusion in Thin CdTe Film on HgCdTe Epilayer

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Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

Cd/Hg Interdiffusion in CdTe passivation layers on HgCdTe epilayer by heat treatment under different annealing conditions have been studied using Secondary Ion Mass Spectrometry (SIMS). Cdmium and Mercury composition profiles have been generated from SIMS depth profiles. The results are important from the point of view of passivation of HgCdTe surface with CdTe layer of graded composition, in order to achieve flat band conditions at CdTe/HgCdTe interface and simultaneously adjusting metal vacancy concentration in the bulk of the material.

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References

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Author information

Authors and Affiliations

  1. Netaji Subhas Institute of Technology, Dwarka, New Delhi, India

    Tapasya Jain & O. P. Thakur

  2. Solid State Physics Laboratory, Lucknow Road, Delhi, India

    Tapasya Jain, Anuradha Dhaul, Rachna Manchanda, Shiv Kumar & R. K. Sharma

Authors
  1. Tapasya Jain
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  2. Anuradha Dhaul
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  3. Rachna Manchanda
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  4. Shiv Kumar
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  5. O. P. Thakur
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  6. R. K. Sharma
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Corresponding author

Correspondence to Tapasya Jain .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Jain, T., Dhaul, A., Manchanda, R., Kumar, S., Thakur, O.P., Sharma, R.K. (2014). Hg/Cd Interdiffusion in Thin CdTe Film on HgCdTe Epilayer. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_225

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