Effect of Growth Temperature on Properties of CdZnO Thin Films

  • Shruti Verma
  • Sushil K. Pandey
  • Mukul Gupta
  • Shaibal Mukherjee
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Ternary CdZnO thin films were grown on sapphire substrate with varied growth temperature from 300 to 600 °C using dual ion-beam sputtering system. The structural, morphological and optical properties of the films were deeply studied. X-ray Diffraction (XRD) measurements indicate phase separation in the deposited CdZnO films. The photoluminescence studies indicate emission centered around 440 nm ~ 2.8 eV. The optical band gap was confirmed by UV–Vis spectrometric measurements. It was also found that band gap narrows down with the increase in growth temperature.

Keywords

AFM CdZnO Photoluminescence UV–Vis spectrometry XRD 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Shruti Verma
    • 1
  • Sushil K. Pandey
    • 1
  • Mukul Gupta
    • 2
  • Shaibal Mukherjee
    • 1
  1. 1.Indian Institute of TechnologyIndoreIndia
  2. 2.UGC-DAE Consortium for Scientific Research, DAVVIndoreIndia

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