Abstract
Ternary CdZnO thin films were grown on sapphire substrate with varied growth temperature from 300 to 600 °C using dual ion-beam sputtering system. The structural, morphological and optical properties of the films were deeply studied. X-ray Diffraction (XRD) measurements indicate phase separation in the deposited CdZnO films. The photoluminescence studies indicate emission centered around 440 nm ~ 2.8 eV. The optical band gap was confirmed by UV–Vis spectrometric measurements. It was also found that band gap narrows down with the increase in growth temperature.
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© 2014 Springer International Publishing Switzerland
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Verma, S., Pandey, S.K., Gupta, M., Mukherjee, S. (2014). Effect of Growth Temperature on Properties of CdZnO Thin Films. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_222
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DOI: https://doi.org/10.1007/978-3-319-03002-9_222
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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