Photo-Induced Inverse Spin Hall Effect in Au/InP hybrid structure

  • Shailesh K. Khamari
  • S. Porwal
  • T. K. Sharma
  • S. M. Oak
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Photo-induced inverse spin Hall effect (ISHE) measurements on a Au/InP metal–semiconductor junction are performed. Spin polarized electrons, which are generated in InP by the circularly polarized laser light of 2.33 eV (532 nm), provide a net spin current in thin Au-layer after crossing the Schottky barrier. This generates a transverse electric current because of large spin orbit coupling in Au-layer. ISHE origin of the measured signal is confirmed by a linear variation of the spin current with the degree of circular polarization of incident light. Furthermore, angle dependence of spin current matches well with the predicted trends.

Index Terms

Inverse spin Hall effect Spin relaxation 

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Notes

Acknowledgments

Authors acknowledge Dr. P.D. Gupta, Director, Raja Ramanna Centre for Advanced Technology for the support and encouragement during the period of work. The technical help of Shri U.K. Ghosh and Mr. Alexander Khakha is also acknowledged.

References

  1. 1.
    Saitoh E, Ueda M, Miyajima H and Tatara G, Appl. Phys. Lett. 88 182509 (2006)CrossRefGoogle Scholar
  2. 2.
    Idrish Miah,Kityk I V, MacA Gray E, Opt. Commun. 281, 5355 (2008)Google Scholar
  3. 3.
    S.D. Ganichev, E.L. Ivchenko, S.N. Danilov, J. Eroms, W. Wegscheider, D. Weiss, W. Prettl, Phys. Rev. Lett. 86, 4358 (2001)CrossRefGoogle Scholar
  4. 4.
    N. Okamoto, H. Kurebayashi, K. Harii, Y. Kajiwara, H. Beere, I. Farrer, T. Trypiniotis, K. Ando, D. A. Ritchie, C. H. W. Barnes, and E. Saitoh; Appl Phys Let. 98, 242104 (2011)Google Scholar
  5. 5.
    Ando K, Morikawa M, Trypiniotis T, Fujikawa Y, Barnes C H W and Saitoh E Appl. Phys. Lett. 96 082502 (2010)CrossRefGoogle Scholar
  6. 6.
    G. Y. Guo J. Appl. Phys. 105, 07C701 (2009)Google Scholar
  7. 7.
    Shailesh K Khamari, V K Dixit and S M Oak. J. Phys. D: Appl. Phys. 44, 265104 (2011)CrossRefGoogle Scholar
  8. 8.
    Y. Ji, A. Hoffmann, J. S. Jiang, and S. D. Bader Appl. Phys. Lett. 85, 6218 (2004)CrossRefGoogle Scholar
  9. 9.
    Weigang Ma, Xing Zhang and Koji Takahashi; J. Phys. D: Appl. Phys. 43,465301 (2010)CrossRefGoogle Scholar
  10. 10.
    Federico Bottegoni, Alberto Ferrari, Stefano Cecchi, Marco Finazzi, Franco Ciccacci, Giovanni Isella, Appl. Phys. Lett. 102, 152411 (2013)Google Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Shailesh K. Khamari
    • 1
  • S. Porwal
    • 1
  • T. K. Sharma
    • 1
  • S. M. Oak
    • 1
  1. 1.Semiconductor Laser SectionRaja Ramanna Centre for Advanced TechnologyIndoreIndia

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