Study of Optical Parameters of the Thin Films of Se100-x Hgx with Laser Irradiation

  • Shabir Ahmad
  • Mohsin Ganaie
  • Nasir Neetu
  • Shahid Khan
  • M. Zulfequar
Conference paper
Part of the Environmental Science and Engineering book series (ESE)


In this study the bulk samples of Se100-x Hgx (x = 0, 5, 15) have been prapered by conventional melt quenching technique. The thin films of the material were prepared by thermal evaporation technique. These thin films were irradiated with pulsed diode laser of wavelength 405 nm and power 100 mW for different durations of time. The transmission spectra was recorded by UV- visible spectrophotometer (200–1100 nm) before and after irradiation. The transmission spectra has been studied to measure the optical constants like extinction coefficient (k), absorption coefficient (α), optical band gap (Eg) and urbach’s energy (Ee). It has been found that the value of absorption coefficient and extinction coefficient increases after irradiation. Also the Urbach’s energy increases and the optical band gap decreases after irradiation. This indicates that the irradiation induces variety of defect states in the material system. It has also been found that the change of these optical parameters is more if the concentration of mercury is increased. This may be due to the addition of mercury and the bonding arrangement of the material system changes. These materials are found suitable for optoelectronic devices due to their high absorption coefficient.

Index Terms

Optical Bandgap Extinction coefficient Absorption coefficient and urbach’s energy 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Zakery A and Elliott S R, J. Non Cryst. Solids 330 1 (2003).Google Scholar
  2. 2.
    J.H Coombs, A.P.J.M Jongenelis, W. Van Es-Spiekman, B.A.J. Jacobs, J. Appl. Phys. 78 (1995) 4906.Google Scholar
  3. 3.
    C. Peng, L. Cheng, M. Mansurippur, J. Appl. Phys. 82 (1997) 4183.Google Scholar
  4. 4.
    Nicolas. HO, Jacques M. Lanie, Real Valee, Alain Villeneuve, Opt. Lett. 28 (2003) 965.CrossRefGoogle Scholar
  5. 5.
    S. Y. Girgis, A.M. selim, J. Phy: Condense Matter 19 (2007) 116213. (11 pp).Google Scholar
  6. 6.
    J.C. Chou, S.Y. Yang, Y.S. Wang, Matter. Chem. Phys. 78 (3) (2003) 666.Google Scholar
  7. 7.
    Nielson J R,Kovalskiy A, Vicek M, Jain H and Miller F, J. Non Cryst. Solid 353 1427 (2007)Google Scholar
  8. 8.
    Ozols A, SaharovsDm and reinfelde M, J. Non Cryst. Solids 352 2652 (2006)Google Scholar
  9. 9.
    Ausama I. Khudiar, M. Zufequar, Zahid H. Khan ‘Laser irradiation effects on optical properties of nanostructure CdSe thin film’ Radiation Effects and Defects in Solids, Vol. 164, No.9, Sep-2009, 551- 560.Google Scholar
  10. 10.
    Adam A. Bahishti, M. A. Majeed Khan, S. Kumar, M. Hussain and M. Zulfequar ‘Effect of Laser irradiation on the optical properties of Amorphous Se96-xTe4Gax. Chalcogenide Letters vol. 4, No. 12 Dec. 2007, p. 155 – 160.Google Scholar
  11. 11.
    Chapter I, Review of laser – matter interaction.Google Scholar
  12. 12.
    N. Tigau, V. Ciupina, G. I. Rasu, C. Gheorghies, E. Vasile, J. Optoelectron. Adv. Mater., 5, 907, (2003).Google Scholar
  13. 13.
    J. C. Mainfacier, M. Demusica, J. P. Fillard, L. Vicario, Thin Solid Films 41 (1977) 127.CrossRefGoogle Scholar
  14. 14.
    MiloslavFrumar, Tomas Wagner, Curr. Opinion Solid State Mat. Sci. 7 (2003) 117.Google Scholar
  15. 15.
    Shamshad A Khan, M. Zulfequar, M. Hussain, Curr. Appl. Phys. 5 (2005) 583.Google Scholar
  16. 16.
    Rasha A. Abdullah, Faleh L. Matar, Mohammed A. Razooqi and Awatif S. Jassim ‘The Effect of Photo irradiation by Low Energy Laser on the Optical Properties of Amorphous GaAs Films’Int. J. Thin Film Sci. Tec. 2 No. 1, 9-13 (2013).Google Scholar
  17. 17.
    A. Elshafie, B. A. Mansour, A. Abdel- AaI, J. Phys. Chem. Solids 60 (1999) 483.Google Scholar
  18. 18.
    J. Tauc, Amorphous and liquid semiconductors, (New York: Plenum Press, 171 (1974)).CrossRefGoogle Scholar
  19. 19.
    K. L. Bhatia, M. singh, N. Kishore, Thin Solid Films 293 (1997) 303.CrossRefGoogle Scholar
  20. 20.
    Kojihayashi, D. Koto and K. Shimakawa, J. Non-Cryst. Solids 198, 696 (1996).Google Scholar
  21. 21.
    Hayashi, K., Kato, D., Shimakawa, K. J. Non- Cryst. Solids 1996, 198, 696.Google Scholar
  22. 22.
    Abkowitz, M., Foley, G. M. T., Palumbo, A.C. AIP Conf. Proc. 1984, 120, 117.Google Scholar
  23. 23.
    Caudhari, S., Biswas, S. K., Chudhary, A. J. Non- Cryst. Solids 1998, 23, 4470.Google Scholar
  24. 24.
    E. Marquez, J. Ramirez, P. villares, R. Jimenez, P. J. S. Ewen, A. E. Owen, J. Phys. D 25 (1992) 535.Google Scholar
  25. 25.
    Mott, N. F.., Davis, E. A. Electronic process in Non-crystalline Materials, Clarendon: Oxford, 1979, PP 382/428.Google Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Shabir Ahmad
    • 1
  • Mohsin Ganaie
    • 1
  • Nasir Neetu
    • 1
  • Shahid Khan
    • 1
  • M. Zulfequar
    • 1
  1. 1.Department of PhysicsJamia Millia IslamiaNew DelhiIndia

Personalised recommendations