Abstract
In this study the bulk samples of Se100-x Hgx (x = 0, 5, 15) have been prapered by conventional melt quenching technique. The thin films of the material were prepared by thermal evaporation technique. These thin films were irradiated with pulsed diode laser of wavelength 405 nm and power 100 mW for different durations of time. The transmission spectra was recorded by UV- visible spectrophotometer (200–1100 nm) before and after irradiation. The transmission spectra has been studied to measure the optical constants like extinction coefficient (k), absorption coefficient (α), optical band gap (Eg) and urbach’s energy (Ee). It has been found that the value of absorption coefficient and extinction coefficient increases after irradiation. Also the Urbach’s energy increases and the optical band gap decreases after irradiation. This indicates that the irradiation induces variety of defect states in the material system. It has also been found that the change of these optical parameters is more if the concentration of mercury is increased. This may be due to the addition of mercury and the bonding arrangement of the material system changes. These materials are found suitable for optoelectronic devices due to their high absorption coefficient.
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Ahmad, S., Ganaie, M., Neetu, N., Khan, S., Zulfequar, M. (2014). Study of Optical Parameters of the Thin Films of Se100-x Hgx with Laser Irradiation. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_219
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DOI: https://doi.org/10.1007/978-3-319-03002-9_219
Publisher Name: Springer, Cham
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