Observation of Over-Layer Deposition on HgCdTe Epilayers Grown by Vertical dipping Liquid Phase Epitaxy
The HRXRD and FTIR characterization of HgCdTe epilayers grown by vertical Dipping Liquid Phase Epitaxy was analyzed to indicate the presence of <2 μm low-x HgCdTe over layer. A higher angle shoulder in HRXRD rocking curve and a graded cut-on as well as a double fringe pattern in FTIR was observed. Removal of ~2 μm surface layer by chemical etching improved the FTIR and HRXRD curves.
KeywordsHgCdTe HRXRD FWHM FTIR Chemical Polishing Surface Damage
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The authors are grateful Director SSPL, Dr. R. Muralidharan, for encouragement and support to carry out this work and permission to publish it.
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