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Varying Photoconductivity of ZnO as a Function of Annealing Temperature

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

Arsenic has been doped in MOCVD grown ZnO thin films using thermal diffusion technique from semi-insulating GaAs substrate. Hall measurements showed p-type conductivity in ZnO. XPS analyses reveal that AsZn–VZn is the shallow acceptor complex which contributes p-type conductivity of the films. As the post-growth annealing temperature increased from 600 to 700 °C the hole concentration also increased from 1.1 × 1018 to 2.8 × 1019 cm−3 respectively. It shows an increase in UV-to-dark current ratio from 284 to 488 at 10 V respectively.

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Authors and Affiliations

  1. Materials Science Centre, Indian Institute of Technology, Kharagpur, 721302, West Bengal, India

    Pranab Biswas & P. Banerji

Authors
  1. Pranab Biswas
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  2. P. Banerji
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Correspondence to Pranab Biswas .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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Biswas, P., Banerji, P. (2014). Varying Photoconductivity of ZnO as a Function of Annealing Temperature. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_211

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