Abstract
Self-compensation arising out of non-stoichiometry makes ZnO as-grown n-type. Nonavailability of stable p-type doping with required carrier concentration limits the formation of homojunction of ZnO. Fabrication of semiconductor heterojunction is thus an alternative approach in device fabrication. In the present study n-ZnO has been grown on p-GaAs substrates using MOCVD technique. The colour of the light which is supposed to be emitted from the said heterojunction has been predicted to be purplish red from the room temperature photoluminescence study. The corresponding colour temperature is found to be less than 1,000 K. Efforts have been made to explain the prediction on the basis of band diagram.
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Acknowledgments
NNH and SKJ thankfully acknowledge the financial help from the MEP Project (Department of Science and Technology, New Delhi, Sanction No. 100/IFD/196/2010-11, dated: 03/06/10). The authors are thankful to Mr. P. Chakraborty and Dr. S. Kundu for their technical help in the growth and analysis, respectively.
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Halder, N.N., Jana, S.K., Biswas, P., Biswas, D., Banerji, P. (2014). Fabrication of n-ZnO/p-GaAs Heterojunction and Prediction of Its Luminescence Based on Photoluminescence Study. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_210
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DOI: https://doi.org/10.1007/978-3-319-03002-9_210
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
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