Abstract
We have investigated the effect of mesa depth on the characteristics of high fill factor (typically the inter- element spacing is < ~20 μm and stripe width ~ 150 μm) laser diode arrays (LDAs). Measurements were carried out on different laser diode bars and it was observed that a shallow mesa not only increases the threshold current of these laser bars but it can prevent lasing condition for a combination of geometrical parameters of mesa. Minimum mesa depth required to achieve lasing in these laser diode arrays is calculated as a function of inter-element spacing considering the effect of lateral current spreading. The work reported here shows that in order to achieve lasing in laser diode arrays with small inter-element distance, the mesa should be deep enough to prevent electrical coupling between the neighboring stripes of LDAs.
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Acknowledgments
The authors thank Director SSPL Dr R Muralidharan for permission to publish this work. The authors are grateful to Mr A.Naik, Mrs TVSL Satyavani and Mr Amit Bhatti for support in technical work. The help provided by Mr Anil Kumar for lapping & polishing and Mr Ajeet Kumar for packaging is also acknowledged.
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Jain, D. et al. (2014). Influence of Lateral Current Spreading on the Characteristics of High Fill Factor Mesa-Stripe Laser Diode Arrays. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_203
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DOI: https://doi.org/10.1007/978-3-319-03002-9_203
Publisher Name: Springer, Cham
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